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UPA1723G Datasheet

  • UPA1723G

  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

  • 8頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA1723
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The
碌
PA1723 is N-Channel MOS Field Effect Transistor
designed for power management switch.
PACKAGE DRAWING (Unit : mm)
8
5
1,2,3 ; Source
; Gate
4
5,6,7,8 ; Drain
FEATURES
鈥?/div>
Low on-state resistance
R
DS(on)1
= 6.7 m鈩?MAX. (V
GS
= 4.5 V, I
D
= 7.0 A)
1.44
R
DS(on)2
= 7.4 m鈩?MAX. (V
GS
= 4.0 V, I
D
= 7.0 A)
1.8 MAX.
1
5.37 MAX.
4
6.0 鹵0.3
4.4
+0.10
鈥?.05
0.8
R
DS(on)3
= 8.7 m鈩?MAX. (V
GS
= 2.5 V, I
D
= 7.0 A)
鈥?/div>
Low C
iss
: C
iss
= 3800 pF TYP.
鈥?/div>
Built-in G-S protection diode
鈥?/div>
Small and surface mount package (Power SOP8)
0.15
0.05 MIN.
0.5 鹵0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
鈥?.05
0.12 M
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
碌
PA1723G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
20
鹵12
鹵13
鹵52
2.0
150
鈥?5 to + 150
2
V
V
A
A
W
擄C
擄C
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (T
A
= 25擄C)
Channel Temperature
Storage Temperature
Gate
Body
Diode
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
2.
Mounted on ceramic substrate of 1200 mm x 2.2mm
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G14026EJ1V0DS00 (1st edition)
Date Published December 1999 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
漏
1998, 1999

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