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UPA1720G Datasheet

  • UPA1720G

  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

  • 68.26KB

  • 8頁(yè)

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA1720
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The
碌
PA1720 is N-Channel MOS Field Effect Transistor designed for DC / DC Converters and power management
application of notebook computers.
FEATURES
鈥?/div>
Low On-Resistance
R
DS(on)1
= 25.0 m鈩?MAX. (V
GS
= 10 V, I
D
= 4.0 A)
R
DS(on)2
= 33.0 m鈩?MAX. (V
GS
= 4.5 V, I
D
= 4.0 A)
R
DS(on)3
= 38.0 m鈩?MAX. (V
GS
= 4.0 V, I
D
= 4.0 A)
鈥?/div>
Low C
iss
: C
iss
= 800 pF TYP.
鈥?/div>
Built-in G-S Protection Diode
鈥?/div>
Small and Surface Mount Package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
碌
PA1720G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 擄C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0)
Gate to Source Voltage (V
DS
= 0)
Drain Current (DC)
Drain Current (Pulse)
Note1
N
ote2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
I
AS
E
AS
T
ch
T
stg
30
鹵20
鹵8
鹵32
2.0
8.0
6.4
150
鈥?5 to + 150
V
V
A
A
W
A
mJ
擄C
擄C
Total Power Dissipation (T
A
= 25 擄C)
Single Avalanche Current
Single Avalanche Energy
Channel Temperature
Storage Temperature
Note3
Note3
Notes 1.
PW
鈮?/div>
10
碌
s, Duty cycle
鈮?/div>
1 %
2.
Mounted on ceramic substrate of 1200 mm x 2.2 mm
3.
Starting T
ch
= 25 擄C, R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0 V
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G13888EJ2V0DS00 (2nd edition)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
漏
1998, 1999

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