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UPA1707G Datasheet

  • UPA1707G

  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

  • 8頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA1707
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
is
N-Channel
MOS
Field
Effect
8
5
1,2,3 ; Source
; Gate
4
5,6,7,8 ; Drain
DESCRIPTION
This product
Transistor designed for DC/DC converters and power
management applications of notebook computers.
FEATURES
鈥?/div>
Low on-resistance
R
DS(on)1
= 10.0 m鈩?(TYP.) (V
GS
= 10 V, I
D
= 5.0 A)
1.44
1
5.37 MAX.
+0.10
鈥?.05
4
6.0 鹵0.3
4.4
0.8
R
DS(on)2
= 12.5 m鈩?(TYP.) (V
GS
= 4.5 V, I
D
= 5.0 A)
鈥?/div>
Low C
iss
: C
iss
= 1400 pF (TYP.)
鈥?/div>
Built-in G-S protection diode
鈥?/div>
Small and surface mount package (Power SOP8)
1.8 MAX.
R
DS(on)3
= 14.0 m鈩?(TYP.) (V
GS
= 4.0 V, I
D
= 5.0 A)
0.15
0.05 MIN.
0.5 鹵0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
鈥?.05
0.12 M
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
碌
PA1707G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
EQUIVALENT CIRCUIT
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
鹵20
鹵10
鹵40
2.0
150
鈥?5 to +150
V
V
A
A
W
擄C
擄C
Gate
Protection
Diode
Source
Gate
Body
Diode
Total Power Dissipation (T
A
= 25擄C)
Channel Temperature
Storage Temperature
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
2.
Mounted on ceramic substrate of 1200 mm x 1.7 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
2
The information in this document is subject to change without notice.
Document No.
G13084EJ1V0DS00 (1st edition)
Date Published January 1999 NS CP(K)
Printed in Japan
漏
1998

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