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UPA1572BH Datasheet

  • UPA1572BH

  • N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

  • 91.67KB

  • 8頁

  • NEC   NEC

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DATA SHEET
Compound Field Effect Power Transistor
碌
PA1572B
N-CHANNEL POWER MOS FET ARRAY
SWITCHING
INDUSTRIAL USE
DESCRIPTION
The
碌
PA1572B is N-channel Power MOS FET Array
that built in 4 circuits designed for solenoid, motor and
lamp driver.
10
PACKAGE DIMENSIONS
in millimeters
26.8 MAX.
4.0
FEATURES
鈥?/div>
Full Mold Package with 4 Circuits
鈥?/div>
4 V driving is possible
鈥?/div>
Low On-state Resistance
R
DS(on)
= 0.6
鈩?/div>
MAX. (V
GS
= 10 V, I
D
= 1 A)
R
DS(on)
= 0.8
鈩?/div>
MAX. (V
GS
= 4 V, I
D
= 1 A)
鈥?/div>
Low Input Capacitance Ciss = 110 pF TYP.
2.54
1.4
0.6鹵0.1
ORDERING INFORMATION
Type Number
Package
10Pin SIP
3
1 2 3 4 5 6 7 8 910
碌
PA1572BH
CONNECTION DIAGRAM
5
7
9
2
1
4
6
8
10
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄C)
Drain to Source Voltage (V
GS
= 0)
Gate to Source Voltage (V
DS
= 0)
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Tempreature
Single Avalanche Current
Single Avalanche Energy
*1 PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
*3 4 Circuits T
A
= 25
擄C
V
DSS
V
GSS (AC)
I
D (DS)
I
D (pulse)
*1
P
T1
*2
P
T2
*3
T
CH
T
stg
I
AS
*4
E
AS
*4
60
鹵20
V
V
鹵2.0
A/unit
鹵6.0
A/unit
20
3.0
W
W
ELECTRODE CONNECTION
2, 4, 6, 8 : Gate
3, 5, 7, 9 : Drain
1, 10
: Source
150
擄C
鈭?5
to +150擄C
5.0
0.1
A
mJ
*2 4 Circuits T
C
= 25
擄C
*4 Starting T
CH
= 25
擄C,
V
DD
= 30 V, V
GS
= 20 V
鈫?/div>
0, R
G
= 25
鈩?
L = 100
碌
H
Build-in Gate Diodes are for protection from static electricity in handing.
In case high voltage over V
GSs
is applied, please append gate protection circuits.
The information in this document is subject to change without notice.
Document No. G11177EJ1V0DS00 (1st edition)
Date Published May 1996 P
Printed in Japan
漏
10 MIN.
2.5
1.4
0.5鹵0.1
1996

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