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UPA1560H Datasheet

  • UPA1560H

  • N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

  • 41.43KB

  • 4頁

  • NEC   NEC

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DATA SHEET
COMPOUND FIELD EFFECT POWER TRANSISTOR
碌
PA1560
N-CHANNEL POWER MOS FET ARRAY
SWITCHING
INDUSTRIAL USE
DESCRIPTION
The
碌
PA1560 is N-Channel Power MOS FET Array
that built in 4 circuits designed for solenoid, motor and
lamp driver.
PACKAGE DRAWING (Unit : mm)
26.8 MAX.
4.0
10
FEATURES
鈥?/div>
Full mold package with 4 circuits
鈥?/div>
4 V driving is possible
鈥?/div>
Low on-state resistance
R
DS(on)1
= 165 m鈩?MAX. (V
GS
= 10 V, I
D
= 1.5 A)
R
DS(on)2
= 200 m鈩?MAX. (V
GS
= 4 V, I
D
= 1.5 A)
鈥?/div>
Low input capacitance
C
iss
= 600 pF TYP.
2.54
1.4
0.6鹵0.1
1 2 3 4 5 6 7 8 910
EQUIVALENT CIRCUIT
3
5
7
9
ORDERING INFORMATION
PART NUMBER
PACKAGE
10-pin SIP
2
1
4
6
8
10
碌
PA1560H
ELECTRODE CONNECTION
2, 4, 6, 8 : Gate
3, 5, 7, 9 : Drain
1, 10
: Source
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS(AC)
V
GSS(DC)
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
120
鹵20
+ 20, 鈥?0
鹵3.0
鹵12
28
3.7
150
鈥?5 to + 150
3.0
0.9
V
V
V
A
A
W
W
擄C
擄C
A
mJ
Total Power Dissipation (T
C
= 25擄C)
Total Power Dissipation (T
A
= 25擄C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
2.
Starting T
ch
= 25 擄C, V
DD
= 60 V, R
G
= 25
鈩?
V
GS
= 20 V
隆
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G14283EJ1V0DS00 (1st edition)
Date Published April 1999 NS CP(K)
Printed in Japan
漏
10 MIN.
1.4
0.5鹵0.1
2.5
1999

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