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UPA1552BH Datasheet

  • UPA1552BH

  • N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

  • 8頁

  • NEC   NEC

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DATA SHEET
COMPOUND FIELD EFFECT POWER TRANSISTOR
碌
PA1552B
N-CHANNEL POWER MOS FET ARRAY
SWITCHING USE
DESCRIPTION
The
碌
PA1552B is N-channel Power MOS FET Array
that built in 4 circuits designed, for solenoid, motor and
lamp driver.
PACKAGE DIMENSIONS
in millimeters
26.8 MAX.
10
4.0
FEATURES
鈥?Large Current and Low On-state Resistance
I
D(DC)
=
鹵5.0
A
R
DS(on)1
鈮?/div>
0.18
鈩?/div>
MAX. (V
GS
= 10 V, I
D
= 3 A)
R
DS(on)2
鈮?/div>
0.24
鈩?/div>
MAX. (V
GS
= 4 V, I
D
= 3 A)
鈥?Low Input Capacitance Ciss = 200 pF TYP.
1 2 3 4 5 6 7 8 9 10
1.4 0.6鹵0.1
2.5
鈥?4 V driving is possible
2.54
1.4
0.5鹵0.1
ORDERING INFORMATION
Type Number
Package
10 Pin SIP
2
3
CONNECTION DIAGRAM
5
7
9
碌
PA1552BH
4
6
8
10
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
V
DSS
I
D(DC)
I
D(pulse)
Note 3
P
T1
Note 4
P
T2
Note 5
T
CH
T
stg
I
AS
Note 6
E
AS
Note 6
Note 1
60
鹵20
鹵5.0
鹵20
28
3.5
150
鈥?5 to +150
5.0
2.5
V
V
A/unit
A/unit
W
W
藲
C
藲
C
A
mJ
1
V
GSS
Note 2
ELECTRODE CONNECTION
2, 4, 6, 8 : Gate
3, 5, 7, 9 : Drain
1, 10
: Source
Notes 1.
V
GS
= 0
3.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
5.
4 Circuits, T
A
= 25 藲C
2.
V
DS
= 0
4.
4 Circuits, T
C
= 25 藲C
6.
Starting T
CH
= 25 藲C, V
DD
= 30 V, V
GS
= 20 V
鈫?/div>
0,
R
G
= 25
鈩?
L = 100
碌
H
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
Document No. G10599EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
漏
10 MIN.
1995

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