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UPA1523BH Datasheet

  • UPA1523BH

  • P-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

  • 8頁

  • NEC   NEC

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DATA SHEET
COMPOUND FIELD EFFECT POWER TRANSISTOR
碌
PA1523B
P-CHANNEL POWER MOS FET ARRAY
SWITCHING
INDUSTRIAL USE
DESCRIPTION
The
碌
PA1523B is P-channel Power MOS FET Array that built
in 4 circuits designed for solenoid, motor and lamp driver.
PACKAGE DIMENSIONS
in millimeters
26.8 MAX.
10
FEATURES
鈥?Full Mold Package with 4 Circuits
鈥?鈥? V driving is possible
鈥?Low On-state Resistance
R
DS(on)1
= 0.8
鈩?/div>
MAX. (@V
GS
= 鈥?0 V, I
D
= 鈥? A)
R
DS(on)2
= 1.3
鈩?/div>
MAX. (@V
GS
= 鈥? V, I
D
= 鈥? A)
鈥?Low Input Capacitance Ciss = 190 pF TYP.
2.5
4.0
2.54
1.4 0.6 鹵 0.1
1.4
0.5 鹵 0.1
ORDERING INFORMATION
Type Number
Package
10 Pin SIP
1 2 3 4 5 6 7 8 910
CONNECTION DIAGRAM
碌
PA1523BH
3
5
7
9
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Drain to Source Voltage (V
GS
= 0)
Gate to Source Voltage (V
DS
= 0)
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
*1
*3
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
4 Circuits, T
A
= 25 藲C
V
DSS
V
GSS(AC)
I
D(DC)
I
D(pulse)
*1
P
T1
*2
P
T2
*3
T
CH
T
stg
I
AS
*4
E
AS
*4
*2
*4
鈥?0
鹵
20
鹵
2.0
8.0
28
3.5
150
鈥?.0
0.4
V
V
A/unit
A/unit
W
W
藲C
A
mJ
2
1
4
6
8
10
ELECTRODE CONNECTION
2, 4, 6, 8 : Gate
3, 5, 7, 9 : Drain
1, 10
: Source
鈥?5 to + 150 藲C
4 Circuits, T
C
= 25 藲C
Starting T
CH
= 25 藲C, V
DD
= 鈥?0 V, V
GS
= 鈥?0 V
鈫?/div>
0, R
G
= 25
鈩?
L = 100
碌
H
Build-in Gate Diodes are for protection from static electricity in handing.
In case high voltage over V
GSS
is applied, please append gate protection circuits.
The information in this document is subject to change without notice.
Document No. G11331EJ1V0DS00
Date Published May 1996 P
Printed in Japan
漏
10 MIN.
鹵
1996

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