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UPA1476H Datasheet

  • UPA1476H

  • NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE D...

  • 64.82KB

  • 6頁

  • NEC   NEC

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DATA SHEET
SILICON TRANSISTOR ARRAY
碌
PA1476
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The
碌
PA1476 is NPN silicon epitaxial Darlington
Power Transistor Array that built in 4 circuits designed
for driving solenoid, relay, lamp and so on.
26.8 MAX.
4.0
PACKAGE DIMENSION
(in millimeters)
FEATURES
ORDERING INFORMATION
1.4
0.6 鹵0.1
2.5
鈥?/div>
Easy mount by 0.1 inch of terminal interval.
鈥?/div>
High h
FE
for Darlington Transistor.
鈥?/div>
Surge Absorber (Zener Diode) built in.
10
2.54
1.4
0.5 鹵0.1
Part Number
Package
10 Pin SIP
Quality Grade
Standard
1 2 3 4 5 6 7 8 9 10
碌
PA1476H
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
CONNECTION DIAGRAM
3
2
1
4
5
6
7
8
10
9
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T1
**
P
T2
***
T
J
100
鹵15
100
鹵15
8
鹵2
鹵3
0.2
3.5
28
150
V
V
V
A/unit
A/unit
A/unit
W
W
藲C
(B)
(C)
PIN No.
2, 4, 6, 8 : Base (B)
3, 5, 7, 9 : Collector (C)
: Emitter (E)
1, 10
R
1
R
2
(E)
.
R
1
= 10 k鈩?/div>
.
.
R
2
= 900
鈩?/div>
.
T
stg
鈥?5 to +150 藲C
*
PW
鈮?/div>
300
碌
s, Duty Cycle
鈮?/div>
10 %
**
4 Circuits, T
a
= 25 藲C
***
4 Circuits, T
c
= 25 藲C
The information in this document is subject to change without notice.
Document No. IC-3565
Date Published November 1994 P
Printed in Japan
漏
MIN.
1994

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