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UPA1453H Datasheet

  • UPA1453H

  • PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE ...

  • 6頁(yè)

  • NEC   NEC

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DATA SHEET
SILICON TRANSISTOR ARRAY
碌
PA1453
PNP SILICON POWER TRANSISTOR ARRAY
HIGH SPEED SWITCHING USE
INDUSTRIAL USE
DESCRIPTION
The
碌
PA1453 is PNP silicon epitaxial Power Transistor
Array that built in 4 circuits designed for driving solenoid,
relay, lamp and so on.
26.8 MAX.
4.0
PACKAGE DIMENSION
(in millimeters)
FEATURES
10 MIN.
1.4
0.6 鹵0.1
2.54
1.4
0.5 鹵0.1
1 2 3 4 5 6 7 8 9 10
鈥?/div>
Easy mount by 0.1 inch of terminal interval.
鈥?/div>
High h
FE
. Low V
CE(sat)
.
h
FE
= 100 to 400 (at I
C
= 鈥? A)
V
CE(sat)
= 鈥?.3 V MAX. (at I
C
= 鈥? A)
10
2.5
ORDERING INFORMATION
Part Number
Package
10 Pin SIP
Quality Grade
Standard
碌
PA1453H
CONNECTION DIAGRAM
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
2
3
5
7
9
4
6
8
10
ABSOLUTE MAXIMUM RATINGS (T
a
= 25 藲C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T1
**
P
T2
***
T
j
鈥?0
鈥?0
鈥?
鈥?
鈥?0
鈥?.0
3.5
28
150
V
V
V
A/unit
A/unit
A/unit
W
W
藲C
1
PIN No.
2, 4, 6, 8 : Base (B)
3, 5, 7, 9 : Collector (C)
: Emitter (E)
1, 10
T
stg
鈥?5 to +150 藲C
*
PW
鈮?/div>
300
碌
s, Duty Cycle
鈮?/div>
10 %
**
4 Circuits, T
a
= 25 藲C
***
4 Circuits, T
c
= 25 藲C
The information in this document is subject to change without notice.
Document No. IC-3519
(O. D. No. IC-6339)
Date Published September 1994 P
Printed in Japan
漏
1994

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