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UPA1434H Datasheet

  • UPA1434H

  • NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE I...

  • 6頁(yè)

  • NEC   NEC

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DATA SHEET
SILICON TRANSISTOR ARRAY
碌
PA1434
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE
INDUSTRIAL USE
DESCRIPTION
The
碌
PA1434 is NPN silicon epitaxial Power Transistor
Array that built in 4 circuits designed for driving solenoid,
relay, lamp and so on.
26.8 MAX.
4.0
PACKAGE DIMENSION
(in millimeters)
FEATURES
鈥?/div>
Easy mount by 0.1 inch of terminal interval.
鈥?/div>
High h
FE
. Low V
CE(sat)
.
h
FE
= 800 to 3200 (at I
C
= 0.5 A)
V
CE(sat)
= 0.5 V
MAX.
10
(at I
C
= 2 A)
ORDERING INFORMATION
Part Number
Package
10 Pin SIP
Quality Grade
Standard
2.54
1.4
0.6 鹵0.1
1.4
0.5 鹵0.1
碌
PA1434H
1 2 3 4 5 6 7 8 910
Please refer to 鈥淨(jìng)uality grade on NEC Semiconductor
Device鈥?(Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on
the devices and its recommended applications.
2
CONNECTION DIAGRAM
3
4
5
6
7
8
9
ABSOLUTE MAXIMUM RATINGS (T
a
= 25 藲C)
Collector to Base Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
(T
a
= 25 藲C)
Total Power Dissipation
(T
c
= 25 藲C)
Junction Temperature
Storage Temperature
**
4 Circuits
T
j
T
stg
150
鈥?5 to +150
藲C
藲C
P
T2
**
28
W
V
CBO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T1
**
60
60
7
3
6
0.6
3.5
V
V
V
A/unit
A/unit
A/unit
W
Collector to Emitter Voltage V
CEO
1
10 MIN.
10
2.5
PIN NO.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10: Emitter (E)
*
PW
鈮?/div>
300
碌
s, Duty Cycle
鈮?/div>
10 %
The information in this document is subject to change without notice.
Document No. IC-3480
Date Published September 1994 P
Printed in Japan
漏
1994

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