DATA SHEET
SILICON TRANSISTOR ARRAY
碌
PA1428A
NPN SILICON POWER TRANSISTOR ARRAY
HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The
碌
PA1428A is NPN silicon epitaxial Darlington Power
Transistor Array that built in Surge Absorber 4 circuits
designed for driving solenoid, relay, lamp and so on.
26.8 MAX.
4.0
PACKAGE DIMENSION
(in millimeters)
FEATURES
10 MIN.
2.54
1.4
0.6 鹵0.2
1.4
0.5 鹵0.2
1 2 3 4 5 6 7 8 910
ORDERING INFORMATION
Part Number
Package
10 Pin SIP
Quality Grade
Standard
碌
PA1428AH
Please refer to 鈥淨(jìng)uality grade on NEC Semiconductor
Device鈥?(Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on
the devices and its recommended applications.
2
3
2.5
鈥?/div>
Surge Absorber built in.
鈥?/div>
Easy mount by 0.1 inch of terminal interval.
鈥?/div>
High h
FE
for Darlington Transistor.
10
CONNECTION DIAGRAM
5
4
6
7
8
10
9
ABSOLUTE MAXIMUM RATINGS (T
a
= 25 藲C)
Collector to Base Voltage
Emitter to Base Voltage
Surge Sustaining Energy
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
**
4 Circuits, T
a
= 25 藲C
***
4 Cuircuits, T
c
= 25 藲C
V
CBO
V
EBO
E
CEO(sus)
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T1
**
P
T2
***
T
j
60
鹵10
60
鹵10
8
30
鹵2
鹵3
0.2
3.5
28
150
V
V
V
mJ/unit
A/unit
A/unit
A/unit
W
W
藲C
(E)
(B)
R
1
R
2
(C)
1
Collector to Emitter Voltage V
CEO
T
stg
鈥?5 to +150 藲C
PIN NO.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10: Emitter (E)
.. 10 k鈩?/div>
R
1
=
..
R
2
= 900
鈩?/div>
*
PW
鈮?/div>
350
碌
s, Duty Cycle
鈮?/div>
2 %
The information in this document is subject to change without notice.
Document No. IC-3479
(O.D. No. IC-8359)
Date Published September 1994 P
Printed in Japan
漏
1994
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