鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
= 2
mA, I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
10 V, I
C
=
2 mA
I
C
= 100
mA, I
B
= 10
mA
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
150
3.5
180
Min
60
50
7
0.1
100
390
0.3
Typ
Max
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.10 max.
鈥?/div>
2SD0601A
脳
2
5藲
0.55
鹵0.05
鈻?/div>
Basic Part Number
(0.20)
Publication date: December 2003
SJJ00232BED
1
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