Transistors with built-in Resistor
UN1231/1231A
Silicon NPN epitaxial planer transistor
Unit: mm
6.9鹵0.1
2.5鹵0.1
1.0
For amplification of the low frequency
0.4
1.5
1.5 R0.9
R0.9
1.0鹵0.1
q
0.85
0.55鹵0.1
0.45鹵0.05
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
UN1231
UN1231A
Symbol
V
CBO
V
CEO
I
C
I
CP
P
T
*
T
j
T
stg
(Ta=25藲C)
Ratings
20
60
20
50
0.7
1.5
1.0
150
鈥?5 to +150
Unit
3
2
1
2.5
2.5
V
UN1231
Collector to
emitter voltage UN1231A
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
M Type Mold Package
V
A
A
W
藲C
藲C
R1(1k鈩?
Internal Connection
1.25鹵0.05
C
B
R2
(47k鈩?
* Printed circuit board: Copper foil area of 1cm
2
or more and thickness of
1.7mm for the collector portion.
E
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
UN1231
UN1231A
UN1231
UN1231A
(Ta=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
h
FE
V
CE(sat)
R
1
R
1
/R
2
Conditions
V
CB
= 15V, I
E
= 0
V
CE
= 15V, I
B
= 0
V
EB
= 14V, I
C
= 0
I
C
= 10碌A, I
E
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 10V, I
C
= 150mA*
I
C
= 100mA, I
B
= 5mA*
0.7
1
0.021
*Pulse measurement
20
60
20
50
800
2100
0.4
1.3
V
k鈩?/div>
min
typ
max
1
10
0.5
Unit
碌A
碌A
mA
V
Collector to emitter voltage
4.1鹵0.2
q
2.4鹵0.2 2.0鹵0.2
q
High forward current transfer ratio h
FE
.
M type mold package.
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
R
0.
7
4.5鹵0.1
s
Features
3.5鹵0.1
1.0
V
Forward current transfer ratio
Collector to emitter saturation voltage
Input resistance
Resistance ratio
1
1
2
