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UMG9N Datasheet

  • UMG9N

  • Emitter common (dual digital transistors)

  • 2頁(yè)

  • ROHM

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EMG9 / UMG9N / FMG9A
Transistors
Emitter common
(dual digital transistors)
EMG9 / UMG9N / FMG9A
!
Features
1) Two DTC114E in a EMT or UMT or SMT package.
2) Mounting cost and area can be cut in half.
!
External dimensions
(Units : mm)
EMG9
0.22
(4)
(3)
(2)
(5)
!
Structure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
0.13
1.2
1.6
(1)
Each lead has same dimensions
ROHM : EMT5
Abbreviated symbol : G9
0.65 0.65
1.3
1.1
2.9
0.9
0.2
(6)
1.25
2.1
0.7
!
Equivalent circuit
EMG9 / UMG9N
(3)
R
1
DTr
2
(4)
R
2
(2)
R
2
(1)
R
1
=10k鈩?/div>
R
1
R
2
=10k鈩?/div>
DTr
1
0.15
0.1Min.
FMG9A
(3)
R
1
DTr
2
(2)
R
2
(4)
R
2
(5)
R
1
=10k鈩?/div>
R
1
R
2
=10k鈩?/div>
DTr
1
(1)
0to0.1
ROHM : UMT5
EIAJ : SC-88A
Abbreviated symbol : G9
(5)/(6)
FMG9A
0.95 0.95
1.9
0.3
(2)
(3)
(1)
1.6
0.15
!
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
I
O
I
C (Max.)
Pd
Tj
Tstg
Limits
50
40
鈭?0
50
100
150 (TOTAL)
300 (TOTAL)
150
鈭?5鈭?150
藲C
藲C
Unit
V
V
2.8
0.8
0.3to0.6
0to0.1
Each lead has same dimensions
ROHM : SMT5
EIAJ : SC-74A
Abbreviated symbol : G9
Output current
EMG9, UMG9N
Power
dissipation FMG9A
Junction temperature
Storage temperature
mA
mW
鈭?/div>
1
鈭?/div>
2
鈭?/div>
1 120mW per element must not be exceeded.
鈭?/div>
2 200mW per element must not be exceeded.
(5)
(4)
(1)
Each lead has same dimensions
2.0
(2)
The following characteristics apply to both the DTr
1
and
DTr
2
.
UMG9N
(4)
(3)
0.5
0.5 0.5
1.0
1.6

UMG9N 產(chǎn)品屬性

  • 1

  • 10 k

  • 表面貼裝

  • 1.7mm

  • TUMT

  • 2 x 1.7 x 0.77mm

  • 5

  • NPN

  • -55 °C

  • 100 mA

  • 30

  • +150 °C

  • 共發(fā)射極、雙

  • 2mm

  • 0.77mm

UMG9N相關(guān)型號(hào)PDF文件下載

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  • 英文版
    TRANSISTOR | 50V V(BR)CEO | 50MA I(C) | SOT-25VAR
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