UF28150J PRELIMINARY
POWER MOSFET TRANSISTOR
150 WATTS, 100 - 500 MHz, 28 V
FEATURES
OUTLINE DRAWING
鈥?N-Channel Enhancement Mode Device
鈥?Applications
鈥?150 Watts CW
鈥?Common Source Gemini Configuration
鈥?RESFET Structure
鈥?Internal Input Impedance Matching
鈥?Gold Metallization
ABSOLUTE MAXIMUM RATINGS AT 25擄C
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Dissipation @25擄C
Storage Temperature
Junction Temperature
Thermal Resistance
VDS
VGS
IDS
PD
Tstg
Tj
60
20
28
233
-55 to +150
200
0.75
Units
V
V
A
W
擄C
擄C
擄C/W
胃
jc
ELECTRICAL CHARACTERISTICS AT 25擄C (*per side)
Parameter
Symbol
Min
Max
Drain-Source Breakdown
Voltage
Drain-Source Leakage
Current
Gate-Source Leakage
Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Reverse Capacitance
Output Capacitance
Power Gain
Collector Efficiency
Load Mismatch Tolerance
BVDSS
IDSS
IGSS
VGS(th)
Gm
CISS
CRSS
COSS
GP
10
50
-
60
-
-
2.0
1.0
-
4.0
2.0
6.0
-
200
50
14
-
-
3.0:1
Units
V
mA
碌A(chǔ)
V
S
pF
pF
pF
dB
%
-
Test Conditions
ID=40 mA, VGS=0.0 V*
VDS=28.0 V, VGS=0.0 V*
VGS=20 V, VDS=0.0 V*
VDS=10.0 V, IDS=200 mA*
VDS=10.0 V, IDS=2000 mA (pulsed)*
VDS=28.0 V, f=1.0 MHz (Reference Only)*
VDS=28.0 V, f=1.0 MHz*
VDS=28.0 V, f=1.0 MHz*
VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
畏
VSWR
TYPICAL OPTIMUM DEVICE IMPEDANCE
F (MHz)
Z in (鈩?
Z load (鈩?
935
960
4.6 + j8.0
4.7 + j7.8
2.3 + j3.1
2.4 + j3.1
M/A-COM POWER TRANSISTORS
鈥?/div>
1742 CRENSHAW BLVD
鈥?/div>
TORRANCE, CA 90501
(310) 320-6160
鈥?/div>
FAX (310) 618-9191
M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96
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