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UC2610DW Datasheet

  • UC2610DW

  • BRIDGE/RING DIODE ARRAY|SO

  • 4頁(yè)

  • ETC

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UC1610
UC3610
SLUS339A 鈥?JUNE 1993 鈥?REVISED MAY 2001
DUAL SCHOTTKY DIODE BRIDGE
FEATURES
D
Monolithic Eight-Diode Array
D
Exceptional Efficiency
D
Low Forward Voltage
D
Fast Recovery Time
D
High Peak Current
D
Small Size
DESCRIPTION
This eight-diode array is designed for
high-current, low duty-cycle applications typical of
flyback voltage clamping for inductive loads. The
dual bridge connection makes this device
particularly applicable to bipolar driven stepper
motors.
The use of Schottky diode technology features
high efficiency through lowered forward voltage
drop and decreased reverse recovery time.
This single monolithic chip is fabricated in both
hermetic CERDIP and copper-leaded plastic
packages. The UC1610 in ceramic is designed for
鈥?5擄C to 125擄C environments but with reduced
peak current capability. The UC2610 in plastic and
ceramic is designed for 鈥?5擄C to 125擄C
environments also with reduced peak current
capability; while the UC3610 in plastic has higher
current rating over a 0擄C to 70擄C temperature
range.
AVAILABLE OPTIONS
Packaged Devices
TA = TJ
鈥?5擄C to 125擄C
鈥?5擄C to 125擄C
0擄C to 70擄C
SOIC Wide (DW)
UC1610DW
UC2610DW
UC3610DW
DIL (J)
UC1610J
UC2610J
UC3610J
DIL (N)
UC1610N
UC2610N
UC3610N
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
錚?/div>
2001, Texas Instruments Incorporated
www.ti.com
1

UC2610DW相關(guān)型號(hào)PDF文件下載

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