Technische Information / Technical Information
Netz-Thyristor-Modu
Phase Control Thyristor Module
TT 330 N 12...16
N
Elektrische Eigenschaften / Electrical properties
H枚chstzul盲ssige Werte / Maximum rated values
Periodische Vorw盲rts- und R眉ckw盲rts-Spitzensperrspannung
T
vj
= - 40擄C...T
vj max
repetitive peak forward off-state and reverse voltages
Vorw盲rts-Sto脽spitzensperrspannung
non-repetitive peak forward off-state voltage
R眉ckw盲rts-Sto脽spitzensperrspannung
non-repetitive peak reverse voltage
Durchla脽strom-Grenzeffektivwert
RMS on-state current
Dauergrenzstrom
average on-state current
Sto脽strom-Grenzwert
surge current
Grenzlastintegral
I虜t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
C
= 85擄C
T
vj
= - 40擄C...T
vj max
V
DRM
, V
RRM
V
DSM
V
RSM
I
TRMSM
I
TAVM
I
TSM
I虜t
(di
T
/dt)
cr
(dv
D
/dt)
cr
1200, 1400
1600
1200, 1400
1600
1300, 1500
1700
520
V
V
V
V
V
V
A
T
vj
= + 25擄C...T
vj max
330
A
T
vj
= 25擄C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
T
vj
= 25擄C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
DIN IEC 747-6
f = 50Hz, i
GM
= 1A, di
G
/dt = 1A/碌s
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
6. Kennbuchstabe / 6th letter F
9100
8000
414000
320000
250
A
A
A虜s
A虜s
A/碌s
1000
V/碌s
Charakteristische Werte / Characteristic values
Durchla脽spannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Z眉ndstrom
gate trigger current
Z眉ndspannung
gate trigger voltage
Nicht z眉ndender Steuerstrom
gate non-trigger current
Nicht z眉ndende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorw盲rts- und R眉ckw盲rts-Sperrstrom
forward off-state and reverse currents
Z眉ndverzug
gate controlled delay time
Freiwerdezeit
circuit commutated turn-off time
T
vj
= T
vj max
, i
T
= 800A
v
T
V
(TO)
r
T
I
GT
V
GT
I
GD
V
GD
I
H
I
L
i
D
, i
R
t
gd
t
q
max.
1,44
V
T
vj
= T
vj max
0,8
V
m鈩?/div>
鈩?/div>
mA
T
vj
= T
vj max
0,6
T
vj
= 25擄C, v
D
= 6V
max.
200
T
vj
= 25擄C, v
D
= 6V
max.
2,0
V
T
vj
= T
vj max
, v
D
= 6V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
max.
max.
max.
10
5
0,2
mA
mA
V
T
vj
= 25擄C, v
D
= 6V, R
A
= 5鈩?/div>
鈩?/div>
max.
300
mA
T
vj
= 25擄C, v
D
= 6V, R
GK
鈮?/div>
=10鈩?/div>
鈩?/div>
i
GM
= 1A, di
G
/dt = 1A/碌s, t
G
= 20碌s
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6
T
vj
= 25擄C, i
GM
= 1A, di
G
/dt = 1A/碌s
T
vj
= T
vj max
, i
TM
= 350A
v
RM
= 100V, V
DM
= 0,67 V
DRM
dv
D
/dt = 20V/碌s, -di
T
/dt = 10A/碌s
5. Kennbuchstabe / 5th letter O
max. 1200
mA
max.
max.
70
3,0
mA
碌s
typ.
V
ISOL
250
3,0
3,6
碌s
kV
kV
Isolations-Pr眉fspannung
insulation test voltage
MOD-E1; R. J枚rke
02. Dez 99
RMS, f = 50Hz, t = 1min
RMS, f = 50Hz, t = 1sec
A /99
Seite/page 1(8)
TT330N14KOF 產(chǎn)品屬性
Infineon
分立半導(dǎo)體模塊
Rectifier Diode Module
520 A
1400 V
50
TT330N14KOF相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
Phase Control Thyristor Module
ETC [ETC]
-
英文版
Netz-Thyristor-Modul Phase Control Thyristor Module
ETC [ETC]
-
英文版
THYRISTOR MODULE|SCR DOUBLER|1.2KV V(RRM)|330A I(T)
ETC
-
英文版
THYRISTOR MODULE|SCR DOUBLER|1.2KV V(RRM)|330A I(T)
-
英文版
THYRISTOR MODULE|SCR DOUBLER|1.4KV V(RRM)|330A I(T)
ETC
-
英文版
THYRISTOR MODULE|SCR DOUBLER|1.4KV V(RRM)|330A I(T)
-
英文版
THYRISTOR MODULE|SCR DOUBLER|1.6KV V(RRM)|330A I(T)
ETC
-
英文版
THYRISTOR MODULE|SCR DOUBLER|1.6KV V(RRM)|330A I(T)
1
2
3
4
5
6
7
8
