Technische Information / Technical Information
Netz-Thyristor-Modul
Phase Control Thyristor Module
TT 285 N 12...16
T
vj
= - 40擄C...T
vj max
T
vj
= - 40擄C...T
vj max
T
vj
= + 25擄C...T
vj max
N
Elektrische Eigenschaften / Electrical properties
H枚chstzul盲ssige Werte / Maximum rated values
Periodische Vorw盲rts- und R眉ckw盲rts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
Vorw盲rts-Sto脽spitzensperrspannung
non-repetitive peak forward off-state voltage
R眉ckw盲rts-Sto脽spitzensperrspannung
non-repetitive peak reverse voltage
Durchla脽strom-Grenzeffektivwert
RMS on-state current
Dauergrenzstrom
average on-state current
Sto脽strom-Grenzwert
surge current
Grenzlastintegral
I虜t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Charakteristische Werte / Characteristic values
Durchla脽spannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Z眉ndstrom
gate trigger current
Z眉ndspannung
gate trigger voltage
Nicht z眉ndender Steuerstrom
gate non-trigger current
Nicht z眉ndende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorw盲rts- und R眉ckw盲rts-Sperrstrom
forward off-state and reverse currents
Z眉ndverzug
gate controlled delay time
Freiwerdezeit
circuit commutated turn-off time
T
vj
= T
vj max
, i
T
= 800A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= 25擄C, v
D
= 6V
T
vj
= 25擄C, v
D
= 6V
T
vj
= T
vj max
, v
D
= 6V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25擄C, v
D
= 6V, R
A
= 5鈩?/div>
鈩?/div>
T
vj
= 25擄C, v
D
= 6V, R
GK
鈮?/div>
10鈩?/div>
鈩?/div>
i
GM
= 1A, di
G
/dt = 1A/碌s, t
G
= 20碌s
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6
T
vj
= 25擄C, i
GM
= 1A, di
G
/dt = 1A/碌s
T
vj
= T
vj max
, i
TM
= 350A
v
RM
= 100V, V
DM
= 0,67 V
DRM
dv
D
/dt = 20V/碌s, -di
T
/dt = 10A/碌s
5. Kennbuchstabe / 5th letter O
RMS, f = 50Hz, t = 1min
RMS, f = 50Hz, t = 1sec
T
C
= 92擄C
T
vj
= 25擄C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
T
vj
= 25擄C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
DIN IEC 747-6
f = 50Hz, i
GM
= 1A, di
G
/dt = 1A/碌s
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
6. Kennbuchstabe / 6th letter F
V
DRM
, V
RRM
V
DSM
V
RSM
I
TRMSM
I
TAVM
I
TSM
I虜t
(di
T
/dt)
cr
(dv
D
/dt)
cr
1200, 1400
1600
1200, 1400
1600
1300, 1500
1700
450
285
9100
8000
414000
320000
250
V
V
V
V
V
V
A
A
A
A
A虜s
A虜s
A/碌s
1000
V/碌s
v
T
V
(TO)
r
T
I
GT
V
GT
I
GD
V
GD
I
H
I
L
i
D
, i
R
t
gd
t
q
max.
1,48
0,8
0,65
V
V
m鈩?/div>
鈩?/div>
mA
V
mA
mA
V
mA
mA
mA
碌s
max.
max.
max.
max.
max.
max.
max.
max.
max.
200
2,0
10
5
0,2
300
1200
70
3,0
typ.
V
ISOL
250
3,0
3,6
碌s
kV
kV
Isolations-Pr眉fspannung
insulation test voltage
MOD-MA; R. J枚rke
27. Nov 97
A 123/97
Seite/page 1(4)
TT285N12KOF 產(chǎn)品屬性
Infineon
分立半導(dǎo)體模塊
Rectifier Diode Module
450 A
1200 V
50
TT285N12KOF相關(guān)型號PDF文件下載
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