Technische Information / Technical Information
Netz-Thyristor-Modul
Phase Control Thyristor Module
TT 140 N 16...22
N
Elektrische Eigenschaften / Electrical properties
H枚chstzul盲ssige Werte / Maximum rated values
Periodische Vorw盲rts- und R眉ckw盲rts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
Vorw盲rts-Sto脽spitzensperrspannung
non-repetitive peak forward off-state voltage
R眉ckw盲rts-Sto脽spitzensperrspannung
non-repetitive peak reverse voltage
Durchla脽strom-Grenzeffektivwert
RMS on-state current
Dauergrenzstrom
average on-state current
Sto脽strom-Grenzwert
surge current
Grenzlastintegral
I虜t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
C
= 85擄C
T
C
= 77擄C
T
vj
= 25擄C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
T
vj
= 25擄C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
DIN IEC 747-6
f = 50Hz, i
GM
= 0,6A, di
G
/dt = 0,6A/碌s
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
6. Kennbuchstabe / 6th letter F
T
vj
= - 40擄C...T
vj max
V
DRM
, V
RRM
1600, 1800
2000, 2200
1600, 1800
2000, 2200
1700, 1900
2100, 2300
250
V
V
V
V
V
V
A
T
vj
= - 40擄C...T
vj max
V
DSM
T
vj
= + 25擄C...T
vj max
V
RSM
I
TRMSM
I
TAVM
140
159
4000
3200
80000
51200
150
A
A
A
A
A虜s
A虜s
A/碌s
I
TSM
I虜t
(di
T
/dt)
cr
(dv
D
/dt)
cr
1000
V/碌s
Charakteristische Werte / Characteristic values
Durchla脽spannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Z眉ndstrom
gate trigger current
Z眉ndspannung
gate trigger voltage
Nicht z眉ndender Steuerstrom
gate non-trigger current
Nicht z眉ndende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorw盲rts- und R眉ckw盲rts-Sperrstrom
forward off-state and reverse currents
Z眉ndverzug
gate controlled delay time
T
vj
= T
vj max
, i
T
= 500A
v
T
max.
1,84
V
T
vj
= T
vj max
V
(TO)
0,9
V
T
vj
= T
vj max
r
T
1,75
m鈩?/div>
T
vj
= 25擄C, v
D
= 6V
I
GT
max.
150
mA
T
vj
= 25擄C, v
D
= 6V
V
GT
max.
2,0
V
T
vj
= T
vj max
, v
D
= 6V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
I
GD
max.
max.
max.
10
5
0,25
mA
mA
V
V
GD
T
vj
= 25擄C, v
D
= 6V, R
A
= 5鈩?/div>
I
H
max.
200
mA
T
vj
= 25擄C, v
D
= 6V, R
GK
鈮?/div>
10鈩?/div>
i
GM
= 0,6A, di
G
/dt = 0,6A/碌s, t
G
= 20碌s
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6
T
vj
= 25擄C, i
GM
= 0,6A, di
G
/dt = 0,6A/碌s
I
L
max.
800
mA
i
D
, i
R
max.
30
mA
t
gd
max.
3
碌s
MOD-E1; R. J枚rke
08. Dez 99
A /99
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