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TSUS4300 Datasheet

  • TSUS4300

  • GaAs Infrared Emitting Diode in ?3 mm (T-1) Package

  • 5頁(yè)

  • VISHAY   VISHAY

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TSUS4300
Vishay Telefunken
GaAs Infrared Emitting Diode in 酶 3 mm (T鈥?) Package
Description
TSUS4300 is an infrared emitting diode in standard
GaAs on GaAs technology, molded in a clear,
blue tinted plastic package. Its lens provides a
high radiant intensity without external optics.
Features
D
D
D
D
D
D
D
D
High radiant power and radiant intensity
Low forward voltage
Suitable for DC and high pulse current operation
Standard T鈥?(酶 3 mm) package
Angle of half intensity
蠒
=
鹵
16
擄
Peak wavelength
l
p
= 950 nm
High reliability
Good spectral matching to Si photodetectors
94 8636
Applications
Infrared remote control systems with small package and low cost requirements in combination with silicon photo
detectors. Infrared source in reflective sensors, tabe end detection. Excellent matching with phototransistor
TEFT 4300.
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
2
170
100
鈥?5...+100
鈥?5...+100
260
450
Unit
V
mA
mA
A
mW
擄
C
擄
C
擄
C
擄
C
K/W
t
p
/T=0.5, t
p
=100
m
s
t
p
=100
m
s
t
x
5sec, 2 mm from case
Document Number 81053
Rev. 2, 20-May-99
www.vishay.de
鈥?/div>
FaxBack +1-408-970-5600
1 (5)

TSUS4300 產(chǎn)品屬性

  • Vishay

  • 紅外發(fā)射源

  • 950 nm

  • 160 mW/sr

  • + 100 C

  • - 55 C

  • T-1

  • Bulk

  • Infrared

  • Circular

  • 170 mW

  • 5000

  • 16 deg

  • TEFD4300 TEFD4300F

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