TSTS730.
Vishay Telefunken
GaAs IR Emitting Diodes in Hermetically Sealed TO18
Case
Description
The TSTS730. series are infrared emitting diodes in
standard GaAs technology in a hermetically sealed
TO鈥?8 package. Their glass lenses provide a high ra-
diant intensity without external optics.
Features
D
D
D
D
D
D
High radiant intensity
Suitable for pulse operation
Angle of half intensity
蠒
=
鹵
12
擄
Peak wavelength
l
p
= 950 nm
High reliability
Good spectral matching to Si photodetectors
94 8642
Applications
Radiation source in near infrared range
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Thermal Resistance Junction/Ambient
Thermal Resistance Junction/Case
Test Conditions
T
case
25
擄
C
t
p
/T = 0.5, t
p
100
m
s,
T
case
25
擄
C
t
p
100
m
s
Symbol
V
R
I
F
I
FM
I
FSM
P
V
P
V
T
j
T
stg
R
thJA
R
thJC
Value
5
250
500
2.5
170
500
100
鈥?5...+100
450
150
Unit
V
mA
mA
A
mW
mW
擄
C
擄
C
K/W
K/W
x
x
x
x
T
case
x
25
擄
C
Document Number 81048
Rev. 2, 20-May-99
www.vishay.de
鈥?/div>
FaxBack +1-408-970-5600
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