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TSM6968DCA Datasheet

  • TSM6968DCA

  • 20V Dual N-Channel MOSFET w/ESD Protected

  • 5頁(yè)

  • TSC

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TSM6968D
20V Dual N-Channel MOSFET w/ESD Protected
Pin assignment:
1. Drain
2. Source 1
3. Source 1
4. Gate 1
5, Gate 2
6. Source 2
7, Source 2
8. Drain
V
DS
= 20V
R
DS (on)
, Vgs @ 4.5V, Ids @ 6.5A =22m鈩?/div>
R
DS (on)
, Vgs @ 2.5V, Ids @ 5.5A =29m鈩?/div>
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Specially designed for Li-ion battery packs.
Battery switch application
Block Diagram
Ordering Information
Part No.
TSM6968DCA
Packing
Tape & Reel
3,000/per reel
Package
TSSOP-8
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V.
Pulsed Drain Current, V
GS
@4.5V
Maximum Power Dissipation
Ta = 25 C
Ta = 70 C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T
J
T
J
, T
STG
o
o
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Limit
20V
鹵 12
6.5
30
1.5
0.96
+150
- 55 to +150
Unit
V
V
A
A
W
o
o
C
C
Thermal Performance
Parameter
Junction to Foot (Drain) Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=10sec.
Symbol
R
胃jf
R
胃ja
Limit
35
83
Unit
o
o
C/W
C/W
TSM6968D
1-5
2003/12 rev. A

TSM6968DCA 產(chǎn)品屬性

  • Taiwan Semiconductor

  • MOSFET

  • Reel

  • 3000

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