1. Gate
2. Drain
3. Source
, Vgs @ 10V, Ids @ 0.6A = 8鈩?/div>
General Description
The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche
and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are
critical and offer additional and safety margin against unexpected voltage transients.
Features
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
I
DSS
and V
DS(on)
specified at elevated temperature
Block Diagram
Ordering Information
Part No.
TSM1N60CP
TSM1N60CH
Packing
Tape & Reel
Tube
Package
TO-252
TO-251
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Ta = 25
o
C
Ta > 25
o
C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Single Pulse Drain to Source Avalanche Energy
(V
DD
= 100V, V
GS
=10V, I
AS
=2A, L=10mH, R
G
=25鈩?
T
J
T
J
, T
STG
E
AS
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Limit
600V
鹵 30
1
9
50
0.4
+150
- 55 to +150
20
Unit
V
V
A
A
W
W/
o
C
o
o
C
C
mJ
Thermal Performance
Parameter
Lead Temperature (1/8鈥?from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=10sec.
Symbol
T
L
R
胃ja
Limit
10
62.5
Unit
S
o
C/W
TSM1N60
1-4
2003/12 rev. E
1
2
3
4
