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TSHA5501 Datasheet

  • TSHA5501

  • GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package

  • 6頁

  • VISHAY   VISHAY

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TSHA550.
Vishay Telefunken
GaAlAs Infrared Emitting Diodes in 酶 5 mm (T鈥?
戮
)
Package
Description
The TSHA550. series are high efficiency infrared emit-
ting diodes in GaAlAs on GaAlAs technology, molded
in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs
technology these high intensity emitters feature about
70 % radiant power improvement.
94 8390
Features
D
D
D
D
D
D
D
Extra high radiant power
Suitable for high pulse current operation
Standard T鈥?
戮
(酶 5 mm) package
Angle of half intensity
蠒
=
鹵
24
擄
Peak wavelength
l
p
= 875 nm
High reliability
Good spectral matching to Si photodetectors
Applications
Infrared remote control and free air transmission systems with high power and comfortable radiation angle re-
quirements in combination with PIN photodiodes or phototransistors.
Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission range between emitter and detector.
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
2.5
210
100
鈥?5...+100
鈥?5...+100
260
350
Unit
V
mA
mA
A
mW
擄
C
擄
C
擄
C
擄
C
K/W
t
p
/T = 0.5, t
p
= 100
m
s
t
p
= 100
m
s
t
x
5sec, 2 mm from case
Document Number 81020
Rev. 2, 20-May-99
www.vishay.de
鈥?/div>
FaxBack +1-408-970-5600
1 (6)

TSHA5501 產品屬性

  • Vishay

  • 紅外發(fā)射源

  • 875 nm

  • 300 mW/sr

  • + 100 C

  • - 55 C

  • T-1 3/4

  • Bulk

  • Infrared

  • Circular

  • 210 mW

  • 4000

  • 24 deg

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