TSHA440.
Vishay Telefunken
GaAlAs Infrared Emitting Diodes in 酶 3 mm (T鈥?)
Package
Description
The TSHA44..series are high efficiency infrared emit-
ting diodes in GaAlAs on GaAlAs technology, molded
in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs
technology these high intensity emitters feature about
50 % radiant power improvement.
94 8398
Features
D
Extra high radiant power
D
High radiant intensity for long transmission dis-
tance
D
Suitable for high pulse current operation
D
Standard T鈥?(酶 3 mm) package for low space
application
D
D
D
D
Angle of half intensity
蠒
=
鹵
20
擄
Peak wavelength
l
p
= 875 nm
High reliability
Good spectral matching to Si photodetectors
Applications
Infrared remote control and free air transmission systems with high power requirements in combination with PIN
photodiodes or phototransistors.
Because of the very low radiance absorption in glass at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission range between emitter and detector.
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
2
180
100
鈥?5...+100
鈥?5...+100
260
450
Unit
V
mA
mA
A
mW
擄
C
擄
C
擄
C
擄
C
K/W
t
p
/T = 0.5, t
p
= 100
m
s
t
p
= 100
m
s
t
x
5sec, 2 mm from case
Document Number 81017
Rev. 2, 20-May-99
www.vishay.de
鈥?/div>
FaxBack +1-408-970-5600
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