TSD965L
Low Vce(sat) NPN Transistor
Pin assignment:
1. Emitter
2. Collector
3. Base
BV
CEO
= 10V
Ic = 5A
V
CE (SAT)
, = 0.23V(typ.) @Ic / Ib = 3A / 60mA
Features
Low V
CE (SAT).
High current capability
High allowable power dissipation
Ordering Information
Part No.
TSD965LCT B0
TSD965LCT A3
Packing
Bulk Pack
Ammo Pack
Package
TO-92
Structure
Epitaxial planar type.
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
DC
Pulse
P
D
T
J
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
15V
10V
7
5
9 (note 1)
0.75 (note 2)
+150
Unit
V
V
V
A
W
o
o
C
C
Operating Junction and Storage Temperature Range
T
STG
- 55 to +150
Note: 1. Single pulse, Pw = 350uS, Duty <= 2%
2. When a device is mounted on a glass epoxy board, Measuring 35mm x 30mm x 1mm
Electrical Characteristics
Ta = 25
o
C unless otherwise noted
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
Conditions
I
C
= 100uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10uA, I
C
= 0
V
CB
= 15V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
/ I
B
= 1.5A / 30mA
I
C
/ I
B
= 3.0A / 60mA
I
C
/ I
B
= 1.5A / 30mA
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 2.0A
V
CE
= 2V, I
C
= 5.0A
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
h
FE
h
FE
h
FE
f
T
Cob
Min
15
10
7
--
--
--
--
--
400
390
185
--
--
Typ
--
--
--
--
--
--
0.23
0.95
--
--
--
170
25
Max
--
--
--
100
100
0.18
0.35
1.2
--
820
--
--
--
Unit
V
V
V
nA
nA
V
V
V
Transition Frequency
Output Capacitance
V
CE
= 6V, I
C
= 50mA,
f = 100MHz
V
CB
= 10V, f=1MHz
MHz
pF
Note : pulse test: pulse width <=380uS, duty cycle <=2%
TSD965L
1-4
2003/12 rev. A
1
2
3
4
