TSD882
Low Vce(sat) NPN Transistor
TO-126
Pin assignment:
TO-126
1. Emitter
2. Collector
3. Base
BV
CEO
= 50V
Ic = 3A
V
CE (SAT)
, = 0.25V(typ.) @Ic / Ib = 2A / 0.2A
Features
Low V
CE (SAT).
Excellent DC current gain characteristics
Ordering Information
Part No.
TSD882CK
Packing
Bulk Pack
Package
TO-126
Structure
Epitaxial planar type.
Complementary to TSB772
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 2mS
DC
Pulse
TO-126
P
D
T
J
T
STG
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
50V
50V
5
3
7 (note 1)
1.0
+150
- 55 to +150
Unit
V
V
V
A
W
o
o
C
C
Electrical Characteristics
Ta = 25
o
C unless otherwise noted
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Conditions
I
C
= 50uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50uA, I
C
= 0
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
/ I
B
= 2.0A / 0.2A
V
CE
= 2V, I
C
= 1A
V
CE
= 5V, I
C
= 100mA,
f = 100MHz
V
CB
= 10V, f=1MHz
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
Cob
Min
50
50
6
--
--
--
160
--
Typ
--
--
--
--
--
0.25
--
90
45
Max
--
--
--
1
1
0.5
500
--
--
Unit
V
V
V
uA
uA
V
MHz
pF
Note : pulse test: pulse width <=380uS, duty cycle <=2%
TSD882
1-1
2003/12 rev. B
1
2
3
