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TSC5302DCP Datasheet

  • TSC5302DCP

  • High Voltage NPN Transistor with Diode

  • 5頁

  • TSC

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Preliminary
TSC5302D
High Voltage NPN Transistor with Diode
Pin assignment:
1. Base
2. Collector
3. Emitter
BV
CEO
= 400V
BV
CBO
= 800V
Ic = 2A
V
CE (SAT)
, = 1.0V @ Ic / Ib = 1A / 0.2A
Features
Built-in free-wheeling diode makes efficient anti
saturation operation.
No need to interest an hfe value because of low variable
storage-time spread even though comer spirit product.
Low base drive requirement.
Suitable for half bridge light ballast applications.
Ordering Information
Part No.
TSC5302DCH
TSC5302DCP
Packing
Tube
T&R
Package
TO-251
TO-252
Block Diagram
Structure
Silicon triple diffused type.
NPN silicon transistor with Diode
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
DC
Pulse
Collector Power Dissipation (Tc=25
o
C)
TO-251
TO-252
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
T
J
T
STG
R螛jc
R螛ja
P
D
I
B
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
800V
400V
10
2
4
1
2
75
1.5
+150
- 65 to +150
6.25
100
Unit
V
V
V
A
A
W
o
o
o
o
C
C
C/W
C/W
TS5302D Preliminary
1-1
2004/09 rev. A

TSC5302DCP 產(chǎn)品屬性

  • Taiwan Semiconductor

  • Transistors Bipolar (BJT)

  • Reel

  • 2500

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