TSC2411D
General Purpose Dual NPN Transistor
Pin assignment:
6. Collector 1
1. Emitter 1
5. Base 2
2. Base 1
4. Emitter 2
3. Collector 2
BV
CEO
= 40V
Ic = 600mA
V
CE (SAT)
, = 0.2V(typ.) @Ic / Ib = 500mA / 50mA
Features
Two TSC2411 chips in a STO-363 package
Transistor elements are independent, eliminating
interference
Optimal for low voltage operation
Ordering Information
Part No.
TSC2411DCU6
Packing
3kpcs / reel
Package
SOT-363
Marking
1PR
Structure
Epitaxial planar type.
Mounting possible with SOT-323 automatic mounting
machines.
Complementary to TSA1036DCU6
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (note)
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. 150mW per element must not be exceeded.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Limit
60V
40V
6
0.6
200 (total)
+150
- 55 to +150
Unit
V
V
V
A
mW
o
o
C
C
Electrical Characteristics
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Conditions
I
C
= 100uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10uA, I
C
= 0
V
CE
= 35V, V
EB
= 0.4V
I
C
/ I
B
= 150mA / 15mA
I
C
/ I
B
= 500mA / 50mA
V
CE
= 1V, I
C
= 100uA
V
CE
= 1V, I
C
= 1mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 150mA
V
CE
= 2V, I
C
= 500mA
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CE
V
CE(SAT)1
V
CE(SAT)2
h
FE
1
h
FE
2
h
FE
3
h
FE
4
h
FE
5
f
T
Cob
Min
60
40
6
--
--
--
20
40
80
82
40
--
--
Typ
--
--
--
--
--
0.20
--
--
--
--
--
250
6
Max
--
--
--
0.1
0.4
0.75
--
--
--
390
--
--
--
Unit
V
V
V
uA
V
V
Transition Frequency
Output Capacitance
V
CE
=5V, I
C
=20mA, f=100MHz
V
CB
= 5V, f=1MHz
MHz
pF
Note : pulse test: pulse width <=380uS, duty cycle <=2%
TSC2411D
1-1
2004/06 rev. A
1
2
3
