TS13005
High Voltage NPN Transistor
ITO-220
Pin assignment:
1. Base
2. Collector
3. Emitter
BV
CEO
= 400V
BV
CBO
= 700V
Ic = 4A
V
CE (SAT)
, = 1V @ Ic / Ib = 4A / 1A
Features
High voltage
.
High speed switching
Ordering Information
Part No.
TS13005CZ
TS13005CI
TS13005CP
T&R
Packing
Tube
Package
TO-220
ITO-220
TO-252
Structure
Silicon triple diffused type.
NPN silicon transistor
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
DC
Pulse
TO-220
ITO-220
TO-252
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
T
J
T
STG
P
D
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
700V
400V
9
4
8
2
1.5
1.3
+150
- 65 to +150
Unit
V
V
V
A
W
o
o
C
C
Electrical Characteristics
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Frequency
Output Capacitance
Turn On Time
Storage Time
Fall Time
I
C
= 10mA, I
B
= 0
I
C
= 10mA, I
E
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 700V, I
E
= 0
V
EB
= 9V, I
C
= 0
I
C
/ I
B
= 4A / 1A
I
C
/ I
B
= 1A / 0.2A
V
CE
= 5V, I
C
= 2A
V
CE
= 10V, I
C
= 0.5A
V
CB
= 10V, f = 0.1MHz
V
CC
= 125V, I
C
= 2A,
I
B1
= 0.4A, I
B2
= - 0.4A,
R
L
= 62.5ohm
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)1
V
CE(SAT)2
h
FE
f
T
Cob
t
ON
t
STG
t
f
8
4
65
0.8
4
0.9
700
400
9
10
1
1
0.5
40
MHz
pF
uS
uS
uS
V
V
V
mA
mA
V
Conditions
Symbol
Min
Typ
Max
Unit
Note : pulse test: pulse width <=300uS, duty cycle <=2%
TS13005
1-1
2003/12 rev. B
1
2
3
