TS13003
High Voltage NPN Transistor
TO-126
Pin assignment:
1. Emitter
2. Collector
3. Emitter
BV
CEO
= 400V
BV
CBO
= 700V
Ic = 1.5A
V
CE (SAT)
, = 0.8V @ Ic / Ib = 0.5A / 0.1A
Features
High voltage
.
High speed switching
Ordering Information
Part No.
TS13003CT
TS13003CK
Packing
Bulk
Package
TO-92
TO-126
Structure
Silicon triple diffused type.
NPN silicon transistor
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 5mS, Duty <= 10%
DC
Pulse
TO-92
TO-126
T
J
T
STG
P
D
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
700V
400V
9
1.5
3
0.6
20
+150
- 55 to +150
Unit
V
V
V
A
W
o
o
C
C
Electrical Characteristics
Ta = 25
o
C unless otherwise noted
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Frequency
Output Capacitance
Turn On Time
Storage Time
Fall Time
Conditions
I
C
= 5mA, I
B
= 0
I
C
= 5mA, I
E
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 700V, I
E
= 0
V
EB
= 9V, I
C
= 0
I
C
/ I
B
= 1.5A / 0.5A
I
C
/ I
B
= 0.5A / 0.1A
V
CE
= 2V, I
C
= 0.5A
V
CE
= 10V, I
C
= 0.1A
V
CB
= 10V, f = 0.1MHz
V
CC
= 125V, I
C
= 1A,
I
B1
= 0.2A, I
B2
= - 0.2A,
R
L
= 125ohm
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)1
V
CE(SAT)2
h
FE
f
T
Cob
t
ON
t
STG
t
f
Min
700
400
9
Typ
Max
Unit
V
V
V
100
10
3
0.5
8
4
21
1.1
4
0.7
40
uA
uA
V
MHz
pF
uS
uS
uS
Note : pulse test: pulse width <=5mS, duty cycle <=10%
TS13003
1-3
2003/12 rev. A
1
2
3
