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TRF4400 Datasheet

  • TRF4400

  • SINGLE-CHIP 433-MHz RF TRANSMITTER

  • 279.42KB

  • 21頁

  • TI

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TRF4400
SINGLE-CHIP 433-MHz RF TRANSMITTER
SLWS113C 鈥揘OVEMBER 2000 鈥?REVISED SEPTEMBER 2001
D
Single-Chip RF Transmitter for 433 MHz
D
D
D
D
D
D
D
D
ISM Band
420-MHz to 450-MHz Operation
FM/FSK Operation for Transmit
24-Bit Direct Digital Synthesizer (DDS) With
11-Bit DAC
On-Chip Voltage-Controlled Oscillator
(VCO) and Phase-Locked Loop (PLL)
On-Chip Reference Oscillator
Minimal External Components Required
Low Power Consumption
Typical Output Power of 7 dBm
PW PACKAGE
(TOP VIEW)
D
Typical Output Frequency Resolution of
D
D
D
D
D
230 Hz
Ultrafast Lock Times From DDS
Implementation
Two Fully-Programmable Operational
Modes
2.2-V to 3.6-V Operation
Flexible Serial Interface to TI MSP430
Microcontroller
24-Pin Plastic Thin-Shrink Small-Outline
Package (TSSOP)
PD_OUT1
PLL_VCC
PD_SET
VCO_TANK1
VCO_TANK2
PLL_GND
DIG_GND
CLOCK
DATA
STROBE
MODE
STDBY
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
PD_OUT2
LOCKDET
PA_OUT
PA_GND
PA_VCC
GND
DIG_VCC
XOSC2
XOSC1
DIG_GND
TX_DATA
NC
description
The TRF4400 single-chip solution is an integrated circuit intended for use as a low cost FSK transmitter to
establish a frequency-agile RF link. The device is available in a 24-lead TSSOP package and is designed to
provide a fully-functional multichannel transmitter. The chip is intended for linear (FM) or digital (FSK) modulated
applications in the 433-MHz ISM band. The single-chip transmitter operates down to 2.2 V and is expressly
designed for low power consumption. The synthesizer has a typical channel spacing of approximately 230 Hz
to allow narrow-band as well as wide-band applications. Due to the narrow channel spacing of the direct digital
synthesizer (DDS), the DDS can be used to adjust the TX frequency and allows the use of inexpensive reference
crystals.
Two fully-programmable operation modes, Mode0 and Mode1, allow extremely fast switching between two
preprogrammed settings (e.g., TX_frequency_0/TX_frequency_1) without reprogramming the device. Each
functional block of the transmitter can be specifically enabled or disabled via the serial interface.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
錚?/div>
2001, Texas Instruments Incorporated
POST OFFICE BOX 655303
鈥?/div>
DALLAS, TEXAS 75265
1

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