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TPS1120YD Datasheet

  • TPS1120YD

  • DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

  • 12頁

  • TI

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TPS1120, TPS1120Y
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS080A 鈥?MARCH 1994 鈥?REVISED AUGUST 1995
D
D
D
D
D
D
Low r
DS(on)
. . . 0.18
鈩?/div>
at V
GS
= 鈥?10 V
3-V Compatible
Requires No External V
CC
TTL and CMOS Compatible Inputs
V
GS(th)
= 鈥?1.5 V Max
ESD Protection Up to 2 kV per
MIL-STD-883C, Method 3015
D PACKAGE
(TOP VIEW)
1SOURCE
1GATE
2SOURCE
2GATE
1
2
3
4
8
7
6
5
1DRAIN
1DRAIN
2DRAIN
2DRAIN
description
The TPS1120 incorporates two independent
p-channel enhancement-mode MOSFETs that
have been optimized, by means of the Texas
Instruments LinBiCMOS鈩?process, for 3-V or 5-V
power distribution in battery-powered systems. With a maximum V
GS(th)
of 鈥?1.5 V and an I
DSS
of only 0.5
碌A(chǔ),
the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where
maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic
discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120
includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and
PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in
small-outline integrated circuit SOIC packages.
The TPS1120 is characterized for an operating junction temperature range, T
J
, from 鈥?40擄C to 150擄C.
AVAILABLE OPTIONS
PACKAGED DEVICES鈥?/div>
TJ
鈥?40擄C to 150擄C
SMALL OUTLINE
(D)
TPS1120D
CHIP FORM
(Y)
TPS1120Y
鈥?The D package is available taped and reeled. Add an R suffix to device
type (e.g., TPS1120DR). The chip form is tested at 25擄C.
Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic
fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to
MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than
maximum-rated voltages to these high-impedance circuits.
LinBiCMS is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
1995, Texas Instruments Incorporated
POST OFFICE BOX 655303
鈥?/div>
DALLAS, TEXAS 75265
1

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