. . . 0.09
鈩?/div>
Typ at V
GS
= 鈥?10 V
3 V Compatible
Requires No External V
CC
TTL and CMOS Compatible Inputs
V
GS(th)
= 鈥?1.5 V Max
Available in Ultrathin TSSOP Package (PW)
ESD Protection Up to 2 kV per
MIL-STD-883C, Method 3015
D PACKAGE
(TOP VIEW)
SOURCE
SOURCE
SOURCE
GATE
D PACKAGE
1
2
3
4
8
7
6
5
DRAIN
DRAIN
DRAIN
DRAIN
description
The TPS1101 is a single, low-r
DS(on)
, P-channel,
enhancement-mode MOSFET. The device has
been optimized for 3-V or 5-V power distribution
in battery-powered systems by means of the
Texas Instruments LinBiCMOS鈩?process. With a
maximum V
GS(th)
of 鈥?1.5 V and an I
DSS
of only
0.5
碌A(chǔ),
the TPS1101 is the ideal high-side switch
for low-voltage, portable battery-management
systems where maximizing battery life is a primary
concern. The low r
DS(on)
and excellent ac
characteristics (rise time 5.5 ns typical) of the
TPS1101 make it the logical choice for
low-voltage switching applications such as power
switches for pulse-width-modulated (PWM)
controllers or motor/bridge drivers.
PW PACKAGE
PW PACKAGE
(TOP VIEW)
The ultrathin thin shrink small-outline package or
TSSOP (PW) version fits in height-restricted
places where other P-channel MOSFETs cannot.
The size advantage is especially important where
board height restrictions do not allow for an
small-outline integrated circuit (SOIC) package.
NC 鈥?No internal connection
Such applications include notebook computers,
personal digital assistants (PDAs), cellular
telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other
P-channel MOSFETs in SOIC packages.
AVAILABLE OPTIONS
PACKAGED DEVICES鈥?/div>
TJ
鈥?40擄C to 150擄C
SMALL OUTLINE
(D)
TPS1101D
TSSOP
(PW)
TPS1101PWLE
NC
SOURCE
SOURCE
SOURCE
SOURCE
SOURCE
GATE
NC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
NC
CHIP FORM
(Y)
TPS1101Y
鈥?The D package is available taped and reeled. Add an R suffix to device type (e.g.,
TPS1101DR). The PW package is only available left-end taped and reeled (indicated by
the LE suffix on the device type; e.g., TPS1101PWLE). The chip form is tested at 25擄C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LinBiCMOS is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
漏
1995, Texas Instruments Incorporated
POST OFFICE BOX 655303
鈥?/div>
DALLAS, TEXAS 75265
1
1
2
3
4
5
6
7
8
9
10
