. . . 0.18
鈩?/div>
Typ at V
GS
= 鈥?10 V
3 V Compatible
Requires No External V
CC
TTL and CMOS Compatible Inputs
V
GS(th)
= 鈥?1.5 V Max
Available in Ultrathin TSSOP Package (PW)
ESD Protection Up to 2 kV Per
MIL-STD-883C, Method 3015
D OR PW PACKAGE
(TOP VIEW)
SOURCE
SOURCE
SOURCE
GATE
D PACKAGE
1
2
3
4
8
7
6
5
DRAIN
DRAIN
DRAIN
DRAIN
PW PACKAGE
description
The TPS1100 is a single P-channel
enhancement-mode MOSFET. The device has
been optimized for 3-V or 5-V power distribution
in battery-powered systems by means of Texas
Instruments LinBiCMOS鈩?process. With a
maximum V
GS(th)
of 鈥?1.5 V and an I
DSS
of only
0.5
碌A(chǔ),
the TPS1100 is the ideal high-side switch
for low-voltage, portable battery-management
systems where maximizing battery life is a primary
concern. The low r
DS(on)
and excellent ac
characteristics (rise time 10 ns typical) make the
TPS1100 the logical choice for low-voltage
switching applications such as power switches for
pulse-width-modulated (PWM) controllers or
motor/bridge drivers.
The ultrathin thin shrink small-outline package or
TSSOP (PW) version with its smaller footprint and
reduction in height fits in places where other
P-channel MOSFETs cannot. The size advantage
is especially important where board real estate is
at a premium and height restrictions do not allow
for a small-outline integrated circuit (SOIC)
package.
schematic
SOURCE
ESD-
Protection
Circuitry
GATE
DRAIN
NOTE A: For all applications, all source pins should be connected
and all drain pins should be connected.
AVAILABLE OPTIONS
PACKAGED DEVICES
TA
鈥?40擄C to 85擄C
SMALL OUTLINE
(D)
TPS1100D
PLASTIC DIP
(P)
TPS1100PWLE
CHIP FORM
(Y)
TPS1100Y
The D package is available taped and reeled. Add an R suffix to device type (e.g.,
TPS1100DR). The PW package is available only left-end taped and reeled
(indicated by the LE suffix on the device type; e.g., TPS1100PWLE). The chip form
is tested at 25擄C.
Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic
fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to
MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than
maximum-rated voltages to these high-impedance circuits.
LinBiCMOS is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
漏
1995, Texas Instruments Incorporated
POST OFFICE BOX 655303
鈥?/div>
DALLAS, TEXAS 75265
1
1
2
3
4
5
6
7
8
9
10
