鈥?/div>
Class AB Operation
TP3022B
15 W, 960 MHz
NPN SILICON
UHF POWER
TRANSISTOR
MAXIMUM RATINGS
Rating
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating Junction Temperature
Storage Temperature Range
Symbol
PD
TJ
Tstg
Value
29
0.167
200
鈥?65 to +150
Unit
Vdc
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
Symbol
R
胃JC
Max
6.0
Unit
擄C/W
CASE 319鈥?7, STYLE 2
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Collector鈥揈mitter Breakdown Voltage
(IC = 10 mA, RBE = 75 Ohms)
Collector鈥揈mitter Leakage
(VCE = 26 V, RBE = 75 Ohms)
Emitter鈥揃ase Breakdown Voltage
(IC = 5.0 mAdc)
Emitter鈥揃ase Leakage
(VBE = 2.5 V)
V(BR)CER
ICER
V(BR)EBO
IEBO
40
鈥?/div>
3.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5.0
鈥?/div>
1.0
Vdc
mA
Vdc
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mA, VCE = 10 V)
hFE
15
鈥?/div>
100
鈥?/div>
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, IE = 0, f = 1.0 MHz)
Cob
鈥?/div>
17
25
pF
FUNCTIONAL TESTS
Common鈥揈mitter Amplifier Power Gain
(VCE = 26 V, Pout = 15 W, f = 960 MHz, IQ = 50 mA)
Collector Efficiency
(VCE = 26 V, Pout = 15 W, f = 960 MHz, IQ = 50 mA)
GPE
畏
c
8.5
45
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
dB
%
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
TP3022B
1
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