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TN3012L Datasheet

  • TN3012L

  • N-Channel 300-V (D-S) MOSFET

  • 41.32KB

  • 4頁

  • VISHAY   VISHAY

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TN3012L
Vishay Siliconix
N-Channel 300-V (D-S) MOSFET
PRODUCT SUMMARY
V
(BR)DSS
Min (V)
300
r
DS(on)
Max (W)
12 @ V
GS
= 10 V
20 @ V
GS
= 4.5 V
V
GS(th)
(V)
0.8 to 3
I
D
(A)
0.18
FEATURES
D
D
D
D
D
Low On-Resistance: 9
W
Secondary Breakdown Free: 320 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
BENEFITS
D
D
D
D
D
Low Offset Voltage
Full-Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High-Temperature
鈥淩un-Away鈥?/div>
APPLICATIONS
D
High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D
Telephone Mute Switches, Ringer Circuits
D
Power Supply, Converters
D
Motor Control
TO-226AA
(TO-92)
S
1
Device Marking
Front View
鈥淪鈥?TN
3012L
xxyy
鈥淪鈥?= Siliconix Logo
xxyy
= Date Code
3
Top View
G
2
D
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
_
Pulsed Drain
Current
a
T
A
= 25_C
T
A
= 100_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
Limit
300
"20
0.18
0.14
0.5
0.8
0.32
156
鈥?5 to 150
Unit
V
A
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70206
S-04279鈥擱ev. C, 16-Jul-01
W
_C/W
_C
www.vishay.com
11-1

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