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Enhanced Page Mode Operation for Faster
Memory Access
CAS-Before-RAS Refresh
Long Refresh Period
鈥?4096 Cycle Refresh in 64 ms
(TMS416100)
鈥?256 ms for Extended Refresh Version
(TMS416100P)
3-State Unlatched Output
Low Power Dissipation (TMS416100P Only)
鈥?500-碌A CMOS Standby Current
鈥?500-碌A Self-Refresh Current
鈥?500-碌A Extended Refresh Battery Backup
Current
All Inputs, Outputs and Clocks Are TTL
Compatible
Operating Free-Air Temperature Range:
0擄C to 70擄C
PIN NOMENCLATURE
A0 鈥?A11
CAS
D
Q
NC
RAS
VCC
VSS
W
Address Inputs
Column-Address Strobe
Data In
Data Out
No Internal Connection
Row-Address Strobe
5-V Supply
Ground
Write Enable
description
The TMS416100/P series are high-speed, 16 777 216-bit dynamic random-access memories, organized as
16 777 216 words of one bit each. The TMS416100P series feature self refresh and extended refresh. They
employ state-of-the-art EPIC鈩?(Enhanced Performance Implanted CMOS) technology for high performance,
reliability, and low power at a low cost.
These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All inputs, outputs, and clocks
are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system design.
Data out is unlatched to allow greater system flexibility.
The TMS416100/P are offered in 300-mil 24/26-lead plastic surface-mount SOJ packages (DJ suffix) and
24/26-lead plastic small-outline packages (DGA suffix). All packages are characterized for operation from 0擄C
to 70擄C.
EPIC is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
漏
1994, Texas Instruments Incorporated
POST OFFICE BOX 1443
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HOUSTON, TEXAS 77251鈥?443
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