鈥?/div>
Monolithic Construction with Built鈥揑n Base鈥揈mitter Shunt Resistor
TIP140
TIP141*
TIP142*
TIP145
TIP146*
TIP147*
*Motorola Preferred Device
NPN
PNP
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MAXIMUM RATINGS
Rating
Symbol
VCEO
VCB
VEB
IC
IB
TIP140
TIP145
60
60
TIP141
TIP146
80
80
TIP142
TIP147
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
5.0
10
15
Collector Current 鈥?Continuous
Peak (1)
Base Current 鈥?Continuous
Total Device Dissipation
@ TC = 25
_
C
0.5
PD
125
Watts
Operating and Storage Junction
Temperature Range
TJ, Tstg
鈥?65 to + 150
10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 鈥?100 VOLTS
125 WATTS
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
R
胃JA
Max
1.0
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Ambient
_
C/W
_
C/W
(1) 5 ms,
v
10% Duty Cycle.
35.7
CASE 340D鈥?2
DARLINGTON SCHEMATICS
NPN
TIP140
TIP141
TIP142
BASE
COLLECTOR
PNP
TIP145
TIP146
TIP147
BASE
COLLECTOR
鈮?/div>
8.0 k
鈮?/div>
40
鈮?/div>
8.0 k
鈮?/div>
40
EMITTER
EMITTER
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
漏
Motorola, Inc. 1996
Motorola Bipolar Power Transistor Device Data
1
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