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TIP140 Datasheet

  • TIP140

  • Monolithic Construction With Built In Base- Emitter Shunt Re...

  • 4頁

  • FAIRCHILD

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TIP140/141/142
TIP140/141/142
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
鈥?High DC Current Gain : h
FE
= 1000 @ V
CE
= 4V, I
C
= 5A (Min.)
鈥?Industrial Use
鈥?Complement to TIP145/146/147
1
TO-3P
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage
: TIP140
: TIP141
: TIP142
Value
60
80
100
60
80
100
5
10
15
0.5
125
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
擄C
擄C
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
V
CEO
Collector-Emitter Voltage : TIP140
: TIP141
: TIP142
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
B
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
R1
R2
E
R1
鈮?/div>
8k鈩?/div>
R2
鈮?/div>
0.12k鈩?/div>
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP140
: TIP141
: TIP142
Collector Cut-off Current
: TIP140
: TIP141
: TIP142
I
CBO
Collector Cut-off Current
: TIP140
: TIP141
: TIP142
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
t
D
t
R
t
STG
t
F
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter ON Voltage
Delay Time
Rise Time
Storage Time
Fall Time
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 5A
V
CE
= 4V, I
C
= 10A
I
C
= 5A, I
B
= 10mA
I
C
= 10A, I
B
= 40mA
I
C
= 10A, I
B
= 40mA
V
CE
= 4V, I
C
= 10A
V
CC
= 30V, I
C
= 5A
I
B1
= 20mA, I
B2
= -20mA
R
L
= 6鈩?/div>
0.15
0.55
2.5
2.5
1000
500
2
3
3.5
3
V
V
V
V
碌s
碌s
碌s
碌s
Rev. A, February 2000
Test Condition
I
C
= 30mA, I
B
= 0
Min.
60
80
100
Typ.
Max.
Units
V
V
V
I
CEO
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
2
2
2
1
1
1
2
mA
mA
mA
mA
mA
mA
mA
漏2000 Fairchild Semiconductor International

TIP140 產(chǎn)品屬性

  • 30

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN - 達(dá)林頓

  • 10A

  • 60V

  • 3V @ 40mA，10A

  • 2mA

  • 1000 @ 5A，4V

  • 125W

  • -

  • 通孔

  • TO-218-3

  • SOT-93

  • 管件

  • TIP140OS

TIP140相關(guān)型號PDF文件下載

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    BOCA [Boca...
  • 英文版
    POWER TRANSISTORS(8A,60-100V,80W)
    MOSPEC [Mo...
  • 英文版
    DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
    MOTOROLA [...
  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    ONSEMI [ON...
  • 英文版
    Monolithic Construction With Built In Base- Emitter Shunt Re...
    FAIRCHILD ...
  • 英文版
    DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
    MOTOROLA
  • 英文版
    Monolithic Construction With Built In Base- Emitter Shunt Re...
    FAIRCHILD
  • 英文版
    POWER TRANSISTORS(8A,60-100V,80W)
    MOSPEC
  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    ONSEMI
  • 英文版
    Power Darlingtons for Linear and Switching Applications
    BOCA
  • 英文版
    NPN SILICON POWER DARLINGTONS
    POINN

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