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TIP121AF Datasheet

  • TIP121AF

  • Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, ...

  • 254.50KB

  • 6頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP120/D
Plastic Medium-Power
Complementary Silicon Transistors
. . . designed for general鈥損urpose amplifier and low鈥搒peed switching applications.
鈥?/div>
High DC Current Gain 鈥?/div>
hFE = 2500 (Typ) @ IC = 4.0 Adc
鈥?/div>
Collector鈥揈mitter Sustaining Voltage 鈥?@ 100 mAdc
VCEO(sus) = 60 Vdc (Min) 鈥?TIP120, TIP125
VCEO(sus)
= 80 Vdc (Min) 鈥?TIP121, TIP126
VCEO(sus)
= 100 Vdc (Min) 鈥?TIP122, TIP127
鈥?/div>
Low Collector鈥揈mitter Saturation Voltage 鈥?/div>
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat)
= 4.0 Vdc (Max) @ IC = 5.0 Adc
鈥?/div>
Monolithic Construction with Built鈥揑n Base鈥揈mitter Shunt Resistors
鈥?/div>
TO鈥?20AB Compact Package
*MAXIMUM RATINGS
Rating
TIP120,
TIP125
60
60
TIP121,
TIP126
80
80
TIP122,
TIP127
100
100
TIP120*
TIP121*
TIP122*
PNP
TIP125*
TIP126*
TIP127*
*Motorola Preferred Device
NPN
PD, POWER DISSIPATION (WATTS)
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Symbol
VCEO
VCB
VEB
IC
IB
PD
PD
E
Unit
Vdc
Vdc
Vdc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
5.0
5.0
8.0
Collector Current 鈥?Continuous
Peak
Base Current
120
mAdc
Watts
W/
_
C
Watts
W/
_
C
mJ
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
Total Power Dissipation @ TA = 25
_
C
Derate above 25
_
C
Operating and Storage Junction,
Temperature Range
65
0.52
2.0
0.016
50
Unclamped Inductive Load Energy (1)
TJ, Tstg
鈥?65 to + 150
DARLINGTON
5 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 鈥?80 鈥?100 VOLTS
65 WATTS
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Max
Unit
Thermal Resistance, Junction to Case
1.92
62.5
_
C/W
_
C/W
Thermal Resistance, Junction to Ambient
R
胃JA
(1) IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100
鈩?
TA TC
4.0 80
CASE 221A鈥?6
TO鈥?20AB
3.0 60
TC
2.0 40
1.0 20
TA
0
0
0
20
40
60
80
100
T, TEMPERATURE (擄C)
120
140
160
Figure 1. Power Derating
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1

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