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TIP105 Datasheet

  • TIP105

  • DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

  • 221.85KB

  • 6頁(yè)

  • ONSEMI

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP100/D
Plastic Medium-Power
Complementary Silicon Transistors
. . . designed for general鈥損urpose amplifier and low鈥搒peed switching applications.
鈥?/div>
High DC Current Gain 鈥?/div>
hFE = 2500 (Typ) @ IC = 4.0 Adc
鈥?/div>
Collector鈥揈mitter Sustaining Voltage 鈥?@ 30 mAdc
VCEO(sus) = 60 Vdc (Min) 鈥?TIP100, TIP105
VCEO(sus)
= 80 Vdc (Min) 鈥?TIP101, TIP106
VCEO(sus)
= 100 Vdc (Min) 鈥?TIP102, TIP107
鈥?/div>
Low Collector鈥揈mitter Saturation Voltage 鈥?/div>
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat)
= 2.5 Vdc (Max) @ IC = 8.0 Adc
鈥?/div>
Monolithic Construction with Built鈥搃n Base鈥揈mitter Shunt Resistors
鈥?/div>
TO鈥?20AB Compact Package
*MAXIMUM RATINGS
Rating
TIP100,
TIP105
60
60
TIP101,
TIP106
80
80
TIP102,
TIP107
100
100
TIP100
TIP101*
TIP102*
TIP105
TIP106*
TIP107*
*Motorola Preferred Device
NPN
PNP
PD, POWER DISSIPATION (WATTS)
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Symbol
VCEO
VCB
VEB
IC
IB
PD
E
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
5.0
8.0
15
1.0
Collector Current 鈥?Continuous
Peak
Base Current
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
Total Power Dissipation @ TA = 25
_
C
Derate above 25
_
C
Operating and Storage Junction
Temperature Range
80
0.64
30
Watts
W/
_
C
mJ
Watts
W/
_
C
Unclamped Inductive Load Energy (1)
PD
2.0
0.016
TJ, Tstg
鈥?65 to + 150
DARLINGTON
8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 鈥?80 鈥?100 VOLTS
80 WATTS
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
R
胃JA
Max
Unit
Thermal Resistance, Junction to Case
1.56
62.5
_
C/W
_
C/W
Thermal Resistance, Junction to Ambient
TA TC
4.0 80
CASE 221A鈥?6
TO鈥?20AB
(1) IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100
鈩?
3.0 60
TC
2.0 40
1.0 20
TA
0
0
0
20
40
60
80
100
T, TEMPERATURE (擄C)
120
140
160
Figure 1. Power Derating
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 7
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1

TIP105 產(chǎn)品屬性

  • 200

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • PNP - 達(dá)林頓

  • 8A

  • 60V

  • 2.5V @ 80mA，8A

  • 50µA

  • 1000 @ 3A，4V

  • 2W

  • -

  • 通孔

  • TO-220-3

  • TO-220

  • 散裝

  • TIP105FS

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