Each device consists of a gallium-arsenide infrared-emitting diode optically coupled to a silicon phototriac
mounted on a 6-pin lead frame encapsulated within an electrically nonconductive plastic compound. The case
withstands soldering temperature with no deformation. Device performance characteristics remain stable when
operated in high-humidity conditions.
鈥?/div>
Input-to-output peak voltage, 5 s maximum duration, 60 Hz (see Note 1) . . . . . . . . . . . . . . . . . . . . . . 3.535 kV
Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 V
Input diode forward current, continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Output repetitive peak off-state voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 V
Output on-state current, total rms value (50-60 Hz, full sine wave): T
A
= 25擄 . . . . . . . . . . . . . . . . . . . . 100 mA
T
A
= 70擄 . . . . . . . . . . . . . . . . . . . . . 50 mA
Output driver nonrepetitive peak on-state current (t
w
= 10 ms, duty cycle = 10%, see Figure 7) . . . . . . 1.2 A
Continuous power dissipation at (or below) 25擄C free-air temperature:
Infrared-emitting diode (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
Phototriac (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Total device (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330 mW
Operating junction temperature range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?40擄C to 100擄C
Storage temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?40擄C to 150擄C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260擄C
鈥?Stresses beyond those listed under 鈥渁bsolute maximum ratings鈥?may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under 鈥渞ecommended operating conditions鈥?is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Input-to-output peak voltage is the internal device dielectric breakdown rating.
2. Derate linearly to 100擄C free-air temperature at the rate of 1.33 mW/擄C.
3. Derate linearly to 100擄C free-air temperature at the rate of 4 mW/擄C.
4. Derate linearly to 100擄C free-air temperature at the rate of 4.4 mW/擄C.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
漏
1998, Texas Instruments Incorporated
POST OFFICE BOX 655303
鈥?/div>
DALLAS, TEXAS 75265
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