TICP107 SERIES
SILICON CONTROLLED RECTIFIERS
Copyright 漏 2000, Power Innovations Limited, UK
JANUARY 1999 - REVISED JUNE 2000
G
G
G
G
G
G
G
1 A Continuous On-State Current
15 A Surge-Current
Glass Passivated Wafer
400 V to 600 V Off-State Voltage
I
GT
50 碌A(chǔ) min, 200 碌A(chǔ) max
di/dt 100A/碌s
Package Options
PACKAGE
LP
LP with fomed leads
PACKING
Bulk
Tape and Reel
PART # SUFFIX
(None)
R
LP PACKAGE
(TOP VIEW)
G
A
K
1
2
3
MDC1AA
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
G
A
K
MDC1AB
1
2
3
absolute maximum ratings over operating junction temperature (unless otherwise noted)
RATING
Repetitive peak off-state voltage (see Note 1)
Repetitive peak reverse voltage
Continuous on-state current at (or below) 25擄C ambient temperature (see Note 2)
Surge on-state current at (or below) 25擄C ambient temperature (see Note 3)
Critical rate of rise of on-state current at 110擄C (see Note 4)
Peak positive gate current (pulse width
鈮?/div>
300
碌s)
Junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
TICP107D
TICP107M
TICP107D
TICP107M
SYMBOL
V
DRM
V
RRM
I
T(RMS)
I
TSM
di/dt
I
GM
T
J
T
stg
T
L
VALUE
400
600
400
600
1
15
100
0.2
-40 to +110
-40 to +125
230
UNIT
V
V
A
A
A/碌s
A
擄C
擄C
擄C
NOTES: 1. These values apply when the gate-cathode resistance R
GK
= 1 k鈩?
2. These values apply for continuous dc operation with resistive load.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. Rate of rise of on-state current after triggering with I
G
= 10mA, di
G
/dt = 1A/碌s.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
1
2
3
4
5
6
