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THN6201E Datasheet

  • THN6201E

  • NPN SiGe RF TRANSISTOR

  • 13頁(yè)

  • TACHYONICS

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THN6201 series
SOT 523
Unit in mm
NPN SiGe RF TRANSISTOR
鈻?/div>
Applications
LNA and wide band amplifier up to GHz range
鈻?/div>
Features
o Low Noise Figure
NF = 1.1 dB Typ. @ f = 1 GHz, V
CE
= 3 V, I
C
= 5 mA
NF = 1.5 dB Typ. @ f = 2 GHz, V
CE
= 3 V, I
C
= 5 mA
o High Power Gain
MAG = 18.5 dB Typ. @ f = 1 GHz, V
CE
= 3 V, I
C
= 15 mA
13 dB Typ. @ f = 2 GHz, V
CE
= 3 V, I
C
= 15 mA
o High Transition Frequency
f
T
= 12 GHz Typ. @ V
CE
= 3 V, I
C
= 15 mA
Pin Configuration
Pin No
1
2
3
Symbol
B
E
C
Description
Base
Emitter
Collector
鈻?/div>
Available Package
Product
Package
SOT23
Unit : mm
Dimension
2.9鈪?.3, 1.2t
鈻?/div>
h
FE
Classification
Marking
AC1
AC2
80 to 160
h
FE
Value 125 to 300
THN6201S
THN6201U
THN6201Z
THN6201E
SOT323 2.0鈪?.25, 1.0t
SOT343 2.0鈪?.25, 1.0t
SOT523
1.6鈪?.8, 0.8t
鈻?/div>
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
STG
T
J
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
THN6201KF SOT623F 1.4鈪?.8, 0.6t
Ratings
20
12
2.5
35
150
-65 ~ 150
150
Unit
V
V
V
mA
mW
鈩?/div>
鈩?/div>
Caution : ESD sensitive device
www.tachyonics.co.kr
- 1/13 -
Aug.-2005
Rev 2.0

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