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TGF4250-EEU Datasheet

  • TGF4250-EEU

  • 4.8 mm Discrete HFET

  • 7頁

  • TRIQUINT

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TGF4250-EEU
4.8 mm Discr ete HFET
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PHOTO ENLARGEMENT
4800 碌m x 0.5 碌m HFET
Nominal Pout of 34- dBm at 8.5- GHz
Nominal Gain of 8.5- dB at 8.5- GHz
Nominal PAE of 53% at 8.5 - GHz
Suitable for high reliability applications
4250
0,572 x 1,334 x 0,102 mm (0.023 x 0.053 x 0.004 in.)
DESCRIPTION
The TriQuint TGF4250-EEU is a single gate 4.8 mm discrete GaAs Heterostructure Field
Ef fect Transistor (HFET) designed for high ef ficiency power applications up to 10. 5- GHz in Class A and
Class AB operation. Typical performance at 2- GHz is 34 - dBm power output, 13 - dB gain, and 63% PAE.
Bond pad and backside metalization is gold plated for compat ibility with eutectic alloy attach
methods as well as thermocompr ession and thermosonic wire-bonding processes. The TGF4250-EEU
is readily assembled using automatic equipment.
TriQuint Semiconductor, Inc.
鈥?/div>
Texas Facilities
鈥?(972) 995-8465
鈥?www.triquint.com

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