音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

TE28F010-90 Datasheet

  • TE28F010-90

  • 28F010 1024K (128K X 8) CMOS FLASH MEMORY

  • 33頁

  • INTEL   INTEL

掃碼查看芯片數據手冊

上傳產品規(guī)格書

PDF預覽

E
8
28F010 1024K (128K X 8) CMOS
FLASH MEMORY
n
n
n
n
Command Register Architecture for
Microprocessor/Microcontroller
Compatible Write Interface
Noise Immunity Features
錚?/div>
鹵10% V
CC
Tolerance
錚?/div>
Maximum Latch-Up Immunity
through EPI Processing
ETOX鈩?Nonvolatile Flash Technology
錚?/div>
EPROM-Compatible Process Base
錚?/div>
High-Volume Manufacturing
Experience
JEDEC-Standard Pinouts
錚?/div>
32-Pin Plastic Dip
錚?/div>
32-Lead PLCC
錚?/div>
32-Lead TSOP
(See Packaging Spec., Order #231369)
n
n
n
n
n
n
n
Flash Electrical Chip-Erase
錚?/div>
1 Second Typical Chip-Erase
Quick-Pulse Programming Algorithm
錚?/div>
10 碌s Typical Byte-Program
錚?/div>
2 Second Chip-Program
100,000 Erase/Program Cycles
12.0 V 鹵5% V
PP
High-Performance Read
錚?/div>
90 ns Maximum Access Time
CMOS Low Power Consumption
錚?/div>
10 mA Typical Active Current
錚?/div>
50 碌A Typical Standby Current
錚?/div>
0 Watts Data Retention Power
Integrated Program/Erase Stop Timer
n
Extended Temperature Options
Intel鈥檚 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write
random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar
EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-
board during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases
memory flexibility, while contributing to time and cost savings.
The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of eight bits. Intel鈥檚 28F010 is
offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC
standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel's ETOX鈩?(EPROM Tunnel Oxide)
process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field
combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V V
PP
supply, the
28F010 performs 100,000 erase and program cycles鈥攚ell within the time limits of the quick-pulse
programming and quick-erase algorithms.
Intel's 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds,
low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance
for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 碌A translates into
power savings when the device is deselected. Finally, the highest degree of latch-up protection is achieved
through Intel's unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA on
address and data pins, from 鈥? V to V
CC
+ 1 V.
With Intel's ETOX process technology base, the 28F010 builds on years of EPROM experience to yield the
highest levels of quality, reliability, and cost-effectiveness.
December 1997
Order Number: 290207-012

TE28F010-90相關型號PDF文件下載

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務：
賣家服務：
技術客服：

0571-85317607

網站技術支持

13606545031

客服在線時間周一至周五
9:00-17:30

關注官方微信號，
第一時間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務的動力！意見一經采納，將有感恩紅包奉上哦！