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TCM29C23N Datasheet

  • TCM29C23N

  • VARIABLE-FREQUENCY PCM OR DSP INTERFACE

  • 20頁

  • TI

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TCM29C23, TCM129C23
VARIABLE-FREQUENCY PCM OR DSP INTERFACE
SCTS029A 鈥?AUGUST 1989 鈥揜EVISED JULY 1996
D
D
D
D
D
D
D
D
Combined ADC, DAC, and Filters
Extended Variable Frequency Operation
鈥?Master Clock Up to 4.096 MHz
鈥?Sample Rates Up to 16 kHz
鈥?Passband Up to 6 kHz
Reliable Silicon-Gate CMOS Technology
Low Power Consumption
鈥?Operating Mode . . . 80 mW Typical
鈥?Power-Down Mode . . . 5 mW Typical
Excellent Power-Supply Rejection Ratio
Over Frequency Range of 0 to 50 kHz
No External Components Needed for
Sample, Hold, and Autozero Functions
Precision Internal Voltage References
碌-law
and A-law Coding
DW OR N PACKAGE
(TOP VIEW)
V
BB
PWRO +
PWRO 鈥?/div>
GSR
PDN
CLKSEL
DCLKR
PCM IN
FSR/TSRE
DGTL GND
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
V
CC
GSX
ANLG IN 鈥?/div>
ANLG IN +
ANLG GND
SIGX/ASEL
TSX/DCLKX
PCM OUT
FSX/TSXE
CLKR/CLKX
description
The TCM29C23 and TCM129C23 are single-chip PCM codecs (pulse-code-modulated encoders and
decoders) and PCM lines filters. These devices provide all the functions required to interface a full-duplex
(4-wire) voice telephone circuit with a TDM (time-division-multiplexed) system. Primary applications include
digital encryption systems, digital voice-band data storage systems, digital signal processing, and mobile
telephones.
These devices are designed to perform the transmit encoding (A/D conversion) and receive decoding (D/A
conversion) as well as the transmit and receive filtering functions in a pulse-code-modulated system. They are
intended to be used at the analog termination of a PCM line or trunk.
The TCM29C23 and TCM129C23 provide the band-pass filtering of the analog signals prior to encoding and
after decoding. These combination devices perform the encoding and decoding of voice and call progress tones
as well as the signaling supervision information.
The TCM29C23 is characterized for operation from 0擄C to 70擄C. The TCM129C23 is characterized for operation
from 鈥?40擄C to 85擄C.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
漏
1996, Texas Instruments Incorporated
POST OFFICE BOX 655303
鈥?/div>
DALLAS, TEXAS 75265
1

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