鈥?/div>
T2800 鈥?Four Quadrant Gating
MT2
T2800
SERIES
TRIACs
8 AMPERES RMS
200 thru 600 VOLTS
MT1
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted.)
Rating
Peak Repetitive Off-State Voltage(1)
(TJ = 鈥?0 to +100擄C, Gate Open)
T2800 B
D
M
RMS On-State Current
(Conduction Angle = 360擄)
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = +80擄C)
Circuit Fusing
(t = 8.3 ms)
Peak Gate Power (Pulse Width = 1
碌s)
Average Gate Power
Peak Gate Trigger Current (Pulse Width = 1
碌s)
Operating Junction Temperature Range
Storage Temperature Range
(TC = +80擄C)
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IGTM
TJ
Tstg
Symbol
VDRM
200
400
600
8
100
40
16
0.35
4
鈥?0 to +100
鈥?0 to +150
Amps
Amps
A2s
Watts
Watt
Amps
擄C
擄C
Value
Unit
Volts
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
2.2
Unit
擄C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
REV 1
Motorola Thyristor Device Data
漏
Motorola, Inc. 1995
1