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T2500DFP Datasheet

  • T2500DFP

  • ISOLATED TRIACs THYRISTORS 6 AMPERES RMS 200 thru 800 VOLTS

  • 4頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by T2500FP/D
Silicon Bidirectional
Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
鈥?/div>
Blocking Voltage to 800 Volts
鈥?/div>
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and
Stability
鈥?/div>
Small, Rugged, Isolated Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
T2500FP
Series
ISOLATED TRIACs
THYRISTORS
6 AMPERES RMS
200 thru 800 VOLTS
MT2
G
MT1
CASE 221C-02
STYLE 3
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted.)
Rating
Repetitive Peak Off-State Voltage(1)
(TJ = 鈥?0 to +100擄C, Gate Open)
T2500BFP
T2500DFP
T2500MFP
T2500NFP
On-State RMS Current (TC = +80擄C)(2)
(Full Cycle Sine Wave 50 to 60 Hz)
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = +80擄C)
Circuit Fusing Considerations
(t = 8.3 ms)
Peak Gate Power
(TC = +80擄C, Pulse Width = 1
碌s)
Average Gate Power
(TC = +80擄C, t = 8.3 ms)
Peak Gate Trigger Current (Pulse Width = 10
碌s)
RMS Isolation Voltage (TA = 25擄C, Relative Humidity
Operating Junction Temperature Range
Storage Temperature Range
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IGTM
VISO
TJ
Tstg
Symbol
VDRM
200
400
600
800
6
60
40
1
0.2
4
1500
鈥?0 to +100
鈥?0 to +150
Amps
Amps
A2s
Watt
Watt
Amps
Volts
擄C
擄C
Value
Unit
Volts
p
20%)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case(2)
Case to Sink
Junction to Ambient
Symbol
R
胃JC
R
胃CS
R
胃JA
Max
2.7
2.2(typ)
60
Unit
擄C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Motorola Thyristor Device Data
漏
Motorola, Inc. 1995
1

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